Invention Grant
- Patent Title: Switching device and methods for controlling electron tunneling therein
- Patent Title (中): 用于控制电子隧穿的开关装置和方法
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Application No.: US11414578Application Date: 2006-04-28
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Publication No.: US08502198B2Publication Date: 2013-08-06
- Inventor: R. Stanley Williams , Zhiyong Li , Douglas Ohlberg , Philip J. Kuekes , Duncan Stewart
- Applicant: R. Stanley Williams , Zhiyong Li , Douglas Ohlberg , Philip J. Kuekes , Duncan Stewart
- Applicant Address: US TX Houston
- Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee Address: US TX Houston
- Main IPC: H01L29/08
- IPC: H01L29/08

Abstract:
A switching device includes at least one bottom electrode and at least one top electrode. The top electrode crosses the bottom electrode at a non-zero angle, thereby forming a junction. A metal oxide layer is established on at least one of the bottom electrode or the top electrode. A molecular layer including a monolayer of organic molecules and a source of water molecules is established in the junction. Upon introduction of a forward bias, the molecular layer facilitates a redox reaction between the electrodes, thereby reducing a tunneling gap between the electrodes.
Public/Granted literature
- US20070252128A1 Switching device and methods for controlling electron tunneling therein Public/Granted day:2007-11-01
Information query
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