发明授权
- 专利标题： Switching device and methods for controlling electron tunneling therein
- 专利标题（中）： 用于控制电子隧穿的开关装置和方法
-
申请号： US11414578申请日： 2006-04-28
-
公开(公告)号： US08502198B2公开(公告)日： 2013-08-06
- 发明人: R. Stanley Williams , Zhiyong Li , Douglas Ohlberg , Philip J. Kuekes , Duncan Stewart
- 申请人： R. Stanley Williams , Zhiyong Li , Douglas Ohlberg , Philip J. Kuekes , Duncan Stewart
- 申请人地址： US TX Houston
- 专利权人： Hewlett-Packard Development Company, L.P.
- 当前专利权人： Hewlett-Packard Development Company, L.P.
- 当前专利权人地址： US TX Houston
- 主分类号： H01L29/08
- IPC分类号： H01L29/08
摘要：
A switching device includes at least one bottom electrode and at least one top electrode. The top electrode crosses the bottom electrode at a non-zero angle, thereby forming a junction. A metal oxide layer is established on at least one of the bottom electrode or the top electrode. A molecular layer including a monolayer of organic molecules and a source of water molecules is established in the junction. Upon introduction of a forward bias, the molecular layer facilitates a redox reaction between the electrodes, thereby reducing a tunneling gap between the electrodes.
公开/授权文献
信息查询
IPC分类:
