发明授权
- 专利标题： Non-volatile semiconductor memory device
- 专利标题（中）： 非易失性半导体存储器件
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申请号： US13232492申请日： 2011-09-14
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公开(公告)号： US08502300B2公开(公告)日： 2013-08-06
- 发明人: Ryo Fukuda , Yoshihisa Iwata
- 申请人： Ryo Fukuda , Yoshihisa Iwata
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2010-212479 20100922
- 主分类号： H01L29/792
- IPC分类号： H01L29/792
摘要：
An dielectric film is formed above the semiconductor substrate. A first conductive layer is formed in the dielectric film and extending in a first direction. The first conductive layer is connected to a first select transistor. A second conductive layer formed in the dielectric film and extending in the first direction. The second conductive layer is connected to a second select transistor. A semiconductor layer is connected to both the first and second conductive layers and functioning as a channel layer of a memory transistor. A gate-insulating film is formed on the semiconductor layer. The gate-insulating film includes a charge accumulation film as a portion thereof. A third conductive layer is surrounded by the gate-insulating film.
公开/授权文献
- US20120068256A1 NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE 公开/授权日：2012-03-22
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