发明授权
- 专利标题: Multi-beam semiconductor laser apparatus
- 专利标题(中): 多光束半导体激光装置
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申请号: US13429147申请日: 2012-03-23
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公开(公告)号: US08503498B2公开(公告)日: 2013-08-06
- 发明人: Yoshinori Tanaka , Eiji Miyai , Dai Ohnishi
- 申请人: Yoshinori Tanaka , Eiji Miyai , Dai Ohnishi
- 申请人地址: JP Kyoto
- 专利权人: Rohm Co., Ltd.
- 当前专利权人: Rohm Co., Ltd.
- 当前专利权人地址: JP Kyoto
- 代理机构: Rabin & Berdo, P.C.
- 优先权: JP2011-64458 20110323; JP2011-64460 20110323
- 主分类号: H01S5/00
- IPC分类号: H01S5/00
摘要:
A multi-beam semiconductor laser apparatus includes three or more stripe semiconductor laser emission units which are arranged on a substrate, isolation grooves which separate the semiconductor laser emission units from each other, and pad electrodes which are disposed on outer sides of the outermost semiconductor laser emission units. The isolation grooves are formed between the pad electrodes and the semiconductor laser emission units adjacent to the pad electrodes and between adjacent semiconductor laser emission units. A distance between two isolation grooves formed on outer sides of the outermost semiconductor laser light emission units is smaller than a distance between two isolation grooves formed on both sides of inner ones of the semiconductor laser light emission units.
公开/授权文献
- US20120243569A1 MULTI-BEAM SEMICONDUCTOR LASER APPARATUS 公开/授权日:2012-09-27
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