发明授权
- 专利标题： Polycrystalline silicon producing method
- 专利标题（中）： 多晶硅生产方法
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申请号： US12805083申请日： 2010-07-12
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公开(公告)号： US08507051B2公开(公告)日： 2013-08-13
- 发明人: Makoto Urushihara , Kazuki Mizushima
- 申请人： Makoto Urushihara , Kazuki Mizushima
- 申请人地址： JP Tokyo
- 专利权人： Mitsubishi Materials Corporation
- 当前专利权人： Mitsubishi Materials Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Edwards Wildman Palmer LLP
- 优先权： JP2009-167185 20090715
- 主分类号： C23C16/24
- IPC分类号： C23C16/24
摘要：
A polycrystalline silicon producing method includes: the first process and the second process. In the first process, a surface temperature is maintained at a predetermined range by adjusting the current value to the silicon seed rod, and the raw material gas is supplied while maintaining a supply amount of chlorosilanes per square millimeter of the surface of the rod in a predetermined range until a temperature of the center portion of the rod reaches a predetermined temperature lower than the melting point of the polycrystalline silicon, and in the second process, a previously determined current value is set corresponding to a rod diameter and the supply amount of the raw material gas per square millimeter of the surface of the rod is decreased to maintain the surface temperature and the temperature of the center portion of the rod at predetermined ranges, respectively.
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