Invention Grant
- Patent Title: Electron beam data storage system and method for high volume manufacturing
- Patent Title (中): 电子束数据存储系统和大批量生产方法
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Application No.: US13049123Application Date: 2011-03-16
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Publication No.: US08507159B2Publication Date: 2013-08-13
- Inventor: Hung-Chun Wang , Pei-Shiang Chen , Tzu-Chin Lin , Faruk Krecinic , Jeng-Horng Chen , Wen-Chun Huang , Ru-Gun Liu
- Applicant: Hung-Chun Wang , Pei-Shiang Chen , Tzu-Chin Lin , Faruk Krecinic , Jeng-Horng Chen , Wen-Chun Huang , Ru-Gun Liu
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G03F9/00
- IPC: G03F9/00

Abstract:
The present disclosure provides for many different embodiments of a charged particle beam data storage system and method. In an example, a method includes dividing a design layout into a plurality of units; creating a lookup table that maps each of the plurality of units to its position within the design layout and a data set, wherein the lookup table associates any repeating units in the plurality of units to a same data set; and exposing an energy sensitive layer to a charged particle beam based on the lookup table.
Public/Granted literature
- US20120237877A1 ELECTRON BEAM DATA STORAGE SYSTEM AND METHOD FOR HIGH VOLUME MANUFACTURING Public/Granted day:2012-09-20
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