发明授权
US08507303B2 Thin film transistor array panel and method for manufacturing the same 有权
薄膜晶体管阵列面板及其制造方法

Thin film transistor array panel and method for manufacturing the same
摘要:
The present invention provides a thin film transistor array panel including an insulating substrate, a gate line formed on the insulating substrate, a gate insulating layer formed on the gate line, a drain electrode and a data line having a source electrode formed on the gate insulating layer wherein the drain electrode faces the source electrode with a gap therebetween, and a pixel electrode connected to the drain electrode. At least one of the gate line, the data line, and the drain electrode includes a first conductive layer made of a conductive oxide and a second conductive layer of Ag that is deposited adjacent to the first conductive layer.
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