发明授权
- 专利标题: Thin film transistor array panel and method for manufacturing the same
- 专利标题(中): 薄膜晶体管阵列面板及其制造方法
-
申请号: US12699764申请日: 2010-02-03
-
公开(公告)号: US08507303B2公开(公告)日: 2013-08-13
- 发明人: Hong-Sick Park
- 申请人: Hong-Sick Park
- 申请人地址: KR
- 专利权人: Samsung Display Co., Ltd.
- 当前专利权人: Samsung Display Co., Ltd.
- 当前专利权人地址: KR
- 代理机构: Innovation Counsel LLP
- 优先权: KR10-2004-0102374 20041207
- 主分类号: H01L21/336
- IPC分类号: H01L21/336
摘要:
The present invention provides a thin film transistor array panel including an insulating substrate, a gate line formed on the insulating substrate, a gate insulating layer formed on the gate line, a drain electrode and a data line having a source electrode formed on the gate insulating layer wherein the drain electrode faces the source electrode with a gap therebetween, and a pixel electrode connected to the drain electrode. At least one of the gate line, the data line, and the drain electrode includes a first conductive layer made of a conductive oxide and a second conductive layer of Ag that is deposited adjacent to the first conductive layer.
公开/授权文献
信息查询
IPC分类: