Invention Grant
- Patent Title: Separation of semiconductor devices
- Patent Title (中): 分离半导体器件
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Application No.: US12667418Application Date: 2008-07-03
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Publication No.: US08507367B2Publication Date: 2013-08-13
- Inventor: Xuejun Kang , Shu Yuan , Jenny Lam , Shiming Lin
- Applicant: Xuejun Kang , Shu Yuan , Jenny Lam , Shiming Lin
- Applicant Address: SG Singapore
- Assignee: Tinggi Technologies Pte Ltd.
- Current Assignee: Tinggi Technologies Pte Ltd.
- Current Assignee Address: SG Singapore
- Agency: Preti Flaherty Beliveau & Pachios LLP
- Priority: SG200704890-3 20070704; SG200718567-1 20071210
- International Application: PCT/SG2008/000238 WO 20080703
- International Announcement: WO2009/005477 WO 20090108
- Main IPC: H01L21/36
- IPC: H01L21/36 ; H01L21/20

Abstract:
A method of fabricating semiconductor devices is disclosed. The method comprises providing a substrate with a plurality of epitaxial layers mounted on the substrate and separating the substrate from the plurality of epitaxial layers while the plurality of epitaxial layers is intact. This preserves the electrical, optical, and mechanical properties of the plurality of epitaxial layers.
Public/Granted literature
- US20100167501A1 SEPARATION OF SEMICONDUCTOR DEVICES Public/Granted day:2010-07-01
Information query
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