Invention Grant
US08507367B2 Separation of semiconductor devices 有权
分离半导体器件

Separation of semiconductor devices
Abstract:
A method of fabricating semiconductor devices is disclosed. The method comprises providing a substrate with a plurality of epitaxial layers mounted on the substrate and separating the substrate from the plurality of epitaxial layers while the plurality of epitaxial layers is intact. This preserves the electrical, optical, and mechanical properties of the plurality of epitaxial layers.
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