The invention provides a method for producing silicon nanowire devices, including the following steps: growing SiNW on a substrate; depositing an amorphous carbon layer and dielectric anti-reflectivity coating orderly; removing part of dielectric anti-reflectivity coating and amorphous carbon layer above the SiNW through dry etching to expose the SiNW device area; depositing an oxide film on the surface of the above structure; forming a metal pad connected with the SiNW in the SiNW device area; depositing a passivation layer on the surface of the above structure; applying photolithography and etching technology to form contact holes on the metal pad and to remove the passivation layer, the oxide film and the dielectric anti-reflectivity coating above the SiNW outside the device area, stopping on the amorphous carbon layer; removing the amorphous carbon layer above the SiNW outside the device area through ashing process to expose the SiNW.