公开(公告)号：US08507369B2

公开(公告)日：2013-08-13

申请号：US13659907

申请日：2012-10-24

Applicant: Xubin Jing ,  Bin Yang ,  Mingsheng Guo

Inventor： Xubin Jing ,  Bin Yang ,  Mingsheng Guo

IPC: H01L21/00

CPC classification number: H01L29/66083 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/0673 ,  H01L29/0692 ,  H01L29/16 ,  H01L29/413 ,  H01L29/66439 ,  H01L29/775

Abstract: The invention provides a method for producing silicon nanowire devices, including the following steps: growing SiNW on a substrate; depositing an amorphous carbon layer and dielectric anti-reflectivity coating orderly; removing part of dielectric anti-reflectivity coating and amorphous carbon layer above the SiNW through dry etching to expose the SiNW device area; depositing an oxide film on the surface of the above structure; forming a metal pad connected with the SiNW in the SiNW device area; depositing a passivation layer on the surface of the above structure; applying photolithography and etching technology to form contact holes on the metal pad and to remove the passivation layer, the oxide film and the dielectric anti-reflectivity coating above the SiNW outside the device area, stopping on the amorphous carbon layer; removing the amorphous carbon layer above the SiNW outside the device area through ashing process to expose the SiNW.

Abstract translation: 本发明提供一种生产硅纳米线器件的方法，包括以下步骤：在衬底上生长SiNW; 有序沉积无定形碳层和电介质抗反射涂层; 通过干蚀刻去除SiNW上方的介电抗反射涂层和无定形碳层的一部分，以暴露SiNW器件区域; 在上述结构的表面上沉积氧化膜; 在SiNW器件区域中形成与SiNW连接的金属焊盘; 在上述结构的表面上沉积钝化层; 施加光刻和蚀刻技术以在金属焊盘上形成接触孔，并在器件区域外的SiNW上方去除钝化层，氧化物膜和介电抗反射涂层，停止在无定形碳层上; 通过灰化处理去除器件区域外的SiNW以上的无定形碳层，以暴露SiNW。

公开(公告)号：US20130102134A1

公开(公告)日：2013-04-25

申请号：US13659907

申请日：2012-10-24

Applicant: Xubin JING ,  Bin YANG ,  Mingsheng GUO

Inventor： Xubin JING ,  Bin YANG ,  Mingsheng GUO

IPC: H01L21/20 ,  B82Y40/00

CPC classification number: H01L29/66083 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/0673 ,  H01L29/0692 ,  H01L29/16 ,  H01L29/413 ,  H01L29/66439 ,  H01L29/775

Abstract: The invention provides a method for producing silicon nanowire devices, including the following steps: growing SiNW on a substrate; depositing an amorphous carbon layer and dielectric anti-reflectivity coating orderly; removing part of dielectric anti-reflectivity coating and amorphous carbon layer above the SiNW through dry etching to expose the SiNW device area; depositing an oxide film on the surface of the above structure; forming a metal pad connected with the SiNW in the SiNW device area; depositing a passivation layer on the surface of the above structure; applying photolithography and etching technology to form contact holes on the metal pad and to remove the passivation layer, the oxide film and the dielectric anti-reflectivity coating above the SiNW outside the device area, stopping on the amorphous carbon layer; removing the amorphous carbon layer above the SiNW outside the device area through ashing process to expose the SiNW.

Abstract translation: 本发明提供一种生产硅纳米线器件的方法，包括以下步骤：在衬底上生长SiNW; 有序沉积无定形碳层和电介质抗反射涂层; 通过干蚀刻去除SiNW上方的介电抗反射涂层和无定形碳层的一部分，以暴露SiNW器件区域; 在上述结构的表面上沉积氧化膜; 在SiNW器件区域中形成与SiNW连接的金属焊盘; 在上述结构的表面上沉积钝化层; 施加光刻和蚀刻技术以在金属焊盘上形成接触孔，并在器件区域外的SiNW上方去除钝化层，氧化物膜和介电抗反射涂层，停止在无定形碳层上; 通过灰化处理去除器件区域外的SiNW以上的无定形碳层，以暴露SiNW。