Invention Grant
- Patent Title: Memristive transistor memory
- Patent Title (中): 记忆晶体管存储器
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Application No.: US13142581Application Date: 2009-01-30
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Publication No.: US08507968B2Publication Date: 2013-08-13
- Inventor: Dmitri B. Strukov , Philip J. Kuekes , Duncan Stewart , Zhiyong Li
- Applicant: Dmitri B. Strukov , Philip J. Kuekes , Duncan Stewart , Zhiyong Li
- Applicant Address: US TX Houston
- Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee Address: US TX Houston
- International Application: PCT/US2009/032740 WO 20090130
- International Announcement: WO2010/087854 WO 20100805
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L21/336
Abstract:
A memory device (100) includes a semiconductor wire including a source region (132), a drain region (134), and a channel region (130) between the source region (132) and the drain region (134). A gate structure that overlies the channel region includes a memristive portion (120) and a conductive portion (110) overlying the memristive portion (120).
Public/Granted literature
- US20110266605A1 Memristive Transistor Memory Public/Granted day:2011-11-03
Information query
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