发明授权
- 专利标题： STRAM with compensation element and method of making the same
- 专利标题（中）： STRAM具有补偿元素和制作方法
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申请号： US13477200申请日： 2012-05-22
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公开(公告)号： US08508005B2公开(公告)日： 2013-08-13
- 发明人: Kaizhong Gao , Haiwen Xi , Wenzhong Zhu , Olle Heinonen
- 申请人： Kaizhong Gao , Haiwen Xi , Wenzhong Zhu , Olle Heinonen
- 申请人地址： US CA Cupertino
- 专利权人： Seagate Technology LLC
- 当前专利权人： Seagate Technology LLC
- 当前专利权人地址： US CA Cupertino
- 代理机构： Mueting Raasch & Gebhardt PA
- 主分类号： H01L21/66
- IPC分类号： H01L21/66 ; G01R33/02 ; G01C11/14
摘要：
A spin-transfer torque memory unit includes a free magnetic layer having a magnetic easy axis; a reference magnetic element having a magnetization orientation that is pinned in a reference direction; an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the magnetic reference element; and a compensation element adjacent to the free magnetic layer. The compensation element applies a bias field on the magnetization orientation of the free magnetic layer. The bias field is formed of a first vector component parallel to the easy axis of the free magnetic layer and a second vector component orthogonal to the easy axis of the free magnetic layer. The bias field reduces a write current magnitude required to switch the direction of the magnetization orientation of the free magnetic layer.