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    TRANSDUCER HEAD WITH MULTIPLE READ SENSORS
    2.
    发明申请
    TRANSDUCER HEAD WITH MULTIPLE READ SENSORS 有权
    带多个读取传感器的传感器头

    公开(公告)号：US20120206830A1

    公开(公告)日：2012-08-16

    申请号：US13028915

    申请日：2011-02-16

    申请人： Kaizhong Gao ,  Olle Heinonen ,  Yonghua Chen

    发明人： Kaizhong Gao ,  Olle Heinonen ,  Yonghua Chen

    IPC分类号： G11B5/127 ,  G11B21/02 ,  G11B5/00 ,  G11B5/02 ,  G11B15/12

    CPC分类号： G11B21/106 ,  B82Y10/00 ,  G11B5/012 ,  G11B5/3948 ,  G11B5/4886 ,  G11B5/596 ,  G11B5/746

    摘要： In order to improve a consistent data track during writing to a storage medium, a plurality of read sensors are affixed to a transducer head. In one implementation, the transducer head includes multiple read sensors placed up-track of the write pole. In another implementation, the transducer head includes at least one read sensor placed up-track of the write pole and at least one read sensor placed down-track of the write pole. Each position of the multiple read sensors relative to the write pole may be unique. One or more read signals of selected read sensors are used to determine the read location and therefore the write pole location relative to the storage medium.

    摘要翻译： 为了在写入存储介质期间改善一致的数据轨迹，多个读取传感器固定在换能器头上。 在一个实施方案中，换能器头部包括放置在写入极上的多个读取传感器。 在另一个实施方式中，换能器头包括至少一个读取传感器，其被放置在写入磁极的上方，并且至少一个读取传感器被放置在写入磁极的下方。 多个读取传感器相对于写入极的每个位置可以是唯一的。 使用所选择的读取传感器的一个或多个读取信号来确定读取位置并因此确定相对于存储介质的写入极点位置。

    STRAM WITH COMPENSATION ELEMENT AND METHOD OF MAKING THE SAME
    4.
    发明申请
    STRAM WITH COMPENSATION ELEMENT AND METHOD OF MAKING THE SAME 有权
    具有补偿元件的条纹及其制造方法

    公开(公告)号：US20100226169A1

    公开(公告)日：2010-09-09

    申请号：US12396905

    申请日：2009-03-03

    申请人： Kaizhong Gao ,  Haiwen Xi ,  Wenzhong Zhu ,  Olle Heinonen

    发明人： Kaizhong Gao ,  Haiwen Xi ,  Wenzhong Zhu ,  Olle Heinonen

    IPC分类号： G11C11/14 ,  H01L21/66 ,  G01R33/02

    CPC分类号： G01R33/093 ,  B82Y25/00 ,  G01R33/1284 ,  G11C11/161 ,  G11C11/1675

    摘要： Spin-transfer torque memory having a compensation element is disclosed. A spin-transfer torque memory unit includes a free magnetic layer having a magnetic easy axis and a magnetization orientation that can change direction due to spin-torque transfer when a write current passes through the spin-transfer torque memory unit; a reference magnetic element having a magnetization orientation that is pinned in a reference direction; an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the magnetic reference element; and a compensation element adjacent to the free magnetic layer. The compensation element applies a bias field on the magnetization orientation of the free magnetic layer. The bias field is formed of a first vector component parallel to the easy axis of the free magnetic layer and a second vector component orthogonal to the easy axis of the free magnetic layer. The bias field reduces a write current magnitude required to switch the direction of the magnetization orientation of the free magnetic layer.

    摘要翻译： 公开了具有补偿元件的自旋转矩存储器。 自旋转移力矩存储单元包括具有磁性容易轴的自由磁性层和当写入电流通过自旋转移转矩存储单元时由于自旋转矩传递而改变方向的磁化取向; 具有被固定在参考方向上的磁化取向的参考磁性元件; 将自由磁性层与磁性参考元件分离的电绝缘和非磁性隧道势垒层; 以及与自由磁性层相邻的补偿元件。 补偿元件对自由磁性层的磁化取向施加偏置场。 偏置场由平行于自由磁性层的容易轴的第一矢量分量和与自由磁性层的容易轴正交的第二矢量分量形成。 偏置场减小了切换自由磁性层的磁化取向方向所需的写入电流幅度。

    Transducer head with multiple read sensors
    5.
    发明授权
    Transducer head with multiple read sensors 有权
    带多个读取传感器的传感器头

    公开(公告)号：US08508880B2

    公开(公告)日：2013-08-13

    申请号：US13028915

    申请日：2011-02-16

    申请人： Kaizhong Gao ,  Olle Heinonen ,  Yonghua Chen

    发明人： Kaizhong Gao ,  Olle Heinonen ,  Yonghua Chen

    IPC分类号： G11B21/02

    CPC分类号： G11B21/106 ,  B82Y10/00 ,  G11B5/012 ,  G11B5/3948 ,  G11B5/4886 ,  G11B5/596 ,  G11B5/746

    摘要： In order to improve a consistent data track during writing to a storage medium, a plurality of read sensors are affixed to a transducer head. In one implementation, the transducer head includes multiple read sensors placed up-track of the write pole. In another implementation, the transducer head includes at least one read sensor placed up-track of the write pole and at least one read sensor placed down-track of the write pole. Each position of the multiple read sensors relative to the write pole may be unique. One or more read signals of selected read sensors are used to determine the read location and therefore the write pole location relative to the storage medium.

    摘要翻译： 为了在写入存储介质期间改善一致的数据轨迹，多个读取传感器固定在换能器头上。 在一个实施方案中，换能器头部包括放置在写入极上的多个读取传感器。 在另一个实施方式中，换能器头包括至少一个读取传感器，其被放置在写入磁极的上方，并且至少一个读取传感器被放置在写入磁极的下方。 多个读取传感器相对于写入极的每个位置可以是唯一的。 使用所选择的读取传感器的一个或多个读取信号来确定读取位置并因此确定相对于存储介质的写入极点位置。

    STRAM with compensation element and method of making the same
    6.
    发明授权
    STRAM with compensation element and method of making the same 失效
    STRAM具有补偿元素和制作方法

    公开(公告)号：US08508005B2

    公开(公告)日：2013-08-13

    申请号：US13477200

    申请日：2012-05-22

    申请人： Kaizhong Gao ,  Haiwen Xi ,  Wenzhong Zhu ,  Olle Heinonen

    发明人： Kaizhong Gao ,  Haiwen Xi ,  Wenzhong Zhu ,  Olle Heinonen

    IPC分类号： H01L21/66 ,  G01R33/02 ,  G01C11/14

    CPC分类号： G01R33/093 ,  B82Y25/00 ,  G01R33/1284 ,  G11C11/161 ,  G11C11/1675

    摘要： A spin-transfer torque memory unit includes a free magnetic layer having a magnetic easy axis; a reference magnetic element having a magnetization orientation that is pinned in a reference direction; an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the magnetic reference element; and a compensation element adjacent to the free magnetic layer. The compensation element applies a bias field on the magnetization orientation of the free magnetic layer. The bias field is formed of a first vector component parallel to the easy axis of the free magnetic layer and a second vector component orthogonal to the easy axis of the free magnetic layer. The bias field reduces a write current magnitude required to switch the direction of the magnetization orientation of the free magnetic layer.

    摘要翻译： 自旋转移力矩存储单元包括具有易磁化轴的自由磁性层; 具有被固定在参考方向上的磁化取向的参考磁性元件; 将自由磁性层与磁性参考元件分离的电绝缘和非磁性隧道势垒层; 以及与自由磁性层相邻的补偿元件。 补偿元件对自由磁性层的磁化取向施加偏置场。 偏置场由平行于自由磁性层的容易轴的第一矢量分量和与自由磁性层的容易轴正交的第二矢量分量形成。 偏置场减小了切换自由磁性层的磁化取向方向所需的写入电流幅度。

    STRAM WITH COMPENSATION ELEMENT AND METHOD OF MAKING THE SAME
    7.
    发明申请
    STRAM WITH COMPENSATION ELEMENT AND METHOD OF MAKING THE SAME 失效
    具有补偿元件的条纹及其制造方法

    公开(公告)号：US20120248558A1

    公开(公告)日：2012-10-04

    申请号：US13477200

    申请日：2012-05-22

    申请人： Kaizhong Gao ,  Haiwen Xi ,  Wenzhong Zhu ,  Olle Heinonen

    发明人： Kaizhong Gao ,  Haiwen Xi ,  Wenzhong Zhu ,  Olle Heinonen

    IPC分类号： H01L29/82

    CPC分类号： G01R33/093 ,  B82Y25/00 ,  G01R33/1284 ,  G11C11/161 ,  G11C11/1675

    摘要： A spin-transfer torque memory unit includes a free magnetic layer having a magnetic easy axis; a reference magnetic element having a magnetization orientation that is pinned in a reference direction; an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the magnetic reference element; and a compensation element adjacent to the free magnetic layer. The compensation element applies a bias field on the magnetization orientation of the free magnetic layer. The bias field is formed of a first vector component parallel to the easy axis of the free magnetic layer and a second vector component orthogonal to the easy axis of the free magnetic layer. The bias field reduces a write current magnitude required to switch the direction of the magnetization orientation of the free magnetic layer.

    摘要翻译： 自旋转移力矩存储单元包括具有易磁化轴的自由磁性层; 具有被固定在参考方向上的磁化取向的参考磁性元件; 将自由磁性层与磁性参考元件分离的电绝缘和非磁性隧道势垒层; 以及与自由磁性层相邻的补偿元件。 补偿元件对自由磁性层的磁化取向施加偏置场。 偏置场由平行于自由磁性层的容易轴的第一矢量分量和与自由磁性层的容易轴正交的第二矢量分量形成。 偏置场减小了切换自由磁性层的磁化取向方向所需的写入电流幅度。

    STRAM WITH COMPENSATION ELEMENT AND METHOD OF MAKING THE SAME
    8.
    发明申请
    STRAM WITH COMPENSATION ELEMENT AND METHOD OF MAKING THE SAME 有权
    具有补偿元件的条纹及其制造方法

    公开(公告)号：US20110194343A1

    公开(公告)日：2011-08-11

    申请号：US13086613

    申请日：2011-04-14

    申请人： Kaizhong Gao ,  Haiwen Xi ,  Wenzhong Zhu ,  Olle Heinonen

    发明人： Kaizhong Gao ,  Haiwen Xi ,  Wenzhong Zhu ,  Olle Heinonen

    IPC分类号： G11C11/14 ,  G11B5/66

    CPC分类号： G01R33/093 ,  B82Y25/00 ,  G01R33/1284 ,  G11C11/161 ,  G11C11/1675

    摘要： Spin-transfer torque memory having a compensation element is disclosed. A spin-transfer torque memory unit includes a free magnetic layer having a magnetic easy axis and a magnetization orientation that can change direction due to spin-torque transfer when a write current passes through the spin-transfer torque memory unit; a reference magnetic element having a magnetization orientation that is pinned in a reference direction; an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the magnetic reference element; and a compensation element adjacent to the free magnetic layer. The compensation element applies a bias field on the magnetization orientation of the free magnetic layer. The bias field is formed of a first vector component parallel to the easy axis of the free magnetic layer and a second vector component orthogonal to the easy axis of the free magnetic layer. The bias field reduces a write current magnitude required to switch the direction of the magnetization orientation of the free magnetic layer.

    摘要翻译： 公开了具有补偿元件的自旋转矩存储器。 自旋转移力矩存储单元包括具有磁性容易轴的自由磁性层和当写入电流通过自旋转移转矩存储单元时由于自旋转矩传递而改变方向的磁化取向; 具有被固定在参考方向上的磁化取向的参考磁性元件; 将自由磁性层与磁性参考元件分离的电绝缘和非磁性隧道势垒层; 以及与自由磁性层相邻的补偿元件。 补偿元件对自由磁性层的磁化取向施加偏置场。 偏置场由平行于自由磁性层的容易轴的第一矢量分量和与自由磁性层的容易轴正交的第二矢量分量形成。 偏置场减小了切换自由磁性层的磁化取向方向所需的写入电流幅度。

    Biasing for tri-layer magnetoresistive sensors
    9.
    发明授权
    Biasing for tri-layer magnetoresistive sensors 有权
    三层磁阻传感器的偏置

    公开(公告)号：US07177122B2

    公开(公告)日：2007-02-13

    申请号：US10694483

    申请日：2003-10-27

    申请人： Chunhong Hou ,  Sining Mao ,  Eric S. Linville ,  Olle Heinonen ,  Xuefei Tang ,  Qing He ,  Eric W. Singleton ,  Song S. Xue

    发明人： Chunhong Hou ,  Sining Mao ,  Eric S. Linville ,  Olle Heinonen ,  Xuefei Tang ,  Qing He ,  Eric W. Singleton ,  Song S. Xue

    IPC分类号： G11B5/33

    CPC分类号： G11B5/3932 ,  G11B5/3909 ,  G11B2005/0018 ,  G11B2005/3996

    摘要： A biasing system for a tri-layer reader stack magnetoresistive sensor is disclosed. The tri-layer reader stack includes a first ferromagnetic free layer, a second ferromagnetic free layer, and a magnetoresistive layer between the first and second ferromagnetic free layers. The free layers are positioned in the tri-layer reader stack such that quiescent state magnetizations of the free layers are antiparallel. A biasing layer is positioned with regard to the tri-layer reader stack, typically separated from the tri-layer reader stack by a nonmagnetic spacer layer. A biasing means is positioned such that a magnetization of the biasing layer is perpendicular to the quiescent state magnetizations of the free layers. This biasing results in the free layers having biased magnetizations directed substantially orthogonal with respect to each other.

    摘要翻译： 公开了一种用于三层读取器堆叠磁阻传感器的偏置系统。 三层读取器堆叠包括第一铁磁自由层，第二铁磁自由层和在第一和第二铁磁性自由层之间的磁阻层。 自由层位于三层读取器堆叠中，使得自由层的静态状态磁化反平行。 偏置层相对于三层读取器堆叠定位，通常通过非磁性间隔层与三层读取器堆叠分离。 偏置装置被定位成使得偏置层的磁化垂直于自由层的静态状态磁化。 该偏置导致自由层具有相对于彼此基本上正交的偏磁化。

    Biasing for tri-layer magnetoresistive sensors
    10.
    发明申请
    Biasing for tri-layer magnetoresistive sensors 有权
    三层磁阻传感器的偏置

    公开(公告)号：US20050088789A1

    公开(公告)日：2005-04-28

    申请号：US10694483

    申请日：2003-10-27

    申请人： Chunhong Hou ,  Sining Mao ,  Eric Linville ,  Olle Heinonen ,  Xuefei Tang ,  Qing He ,  Eric Singleton ,  Song Xue

    发明人： Chunhong Hou ,  Sining Mao ,  Eric Linville ,  Olle Heinonen ,  Xuefei Tang ,  Qing He ,  Eric Singleton ,  Song Xue

    IPC分类号： G11B5/127 ,  G11B5/39

    CPC分类号： G11B5/3932 ,  G11B5/3909 ,  G11B2005/0018 ,  G11B2005/3996

    摘要： A biasing system for a tri-layer reader stack magnetoresistive sensor is disclosed. The tri-layer reader stack includes a first ferromagnetic free layer, a second ferromagnetic free layer, and a magnetoresistive layer between the first and second ferromagnetic free layers. The free layers are positioned in the tri-layer reader stack such that quiescent state magnetizations of the free layers are antiparallel. A biasing layer is positioned with regard to the tri-layer reader stack, typically separated from the tri-layer reader stack by a nonmagnetic spacer layer. A biasing means is positioned such that a magnetization of the biasing layer is perpendicular to the quiescent state magnetizations of the free layers. This biasing results in the free layers having biased magnetizations directed substantially orthogonal with respect to each other.

    摘要翻译： 公开了一种用于三层读取器堆叠磁阻传感器的偏置系统。 三层读取器堆叠包括第一铁磁自由层，第二铁磁自由层和在第一和第二铁磁性自由层之间的磁阻层。 自由层位于三层读取器堆叠中，使得自由层的静态状态磁化反平行。 偏置层相对于三层读取器堆叠定位，通常通过非磁性间隔层与三层读取器堆叠分离。 偏置装置被定位成使得偏置层的磁化垂直于自由层的静态状态磁化。 该偏置导致自由层具有相对于彼此基本上正交的偏磁化。