- 专利标题： Method of programming non-volatile memory device and non-volatile memory device using the same
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申请号： US12461934申请日： 2009-08-28
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公开(公告)号： US08508996B2公开(公告)日： 2013-08-13
- 发明人: Moosung Kim , Ohsuk Kwon
- 申请人： Moosung Kim , Ohsuk Kwon
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： KR10-2008-0103198 20081021
- 主分类号： G11C11/34
- IPC分类号： G11C11/34
摘要：
A program method of a nonvolatile memory device according to example embodiments includes a operation (a) of detecting a level of a program voltage; and a operation (b) of providing a unselected word line voltage and a bit line precharge voltage having a variable level respectively according to the detected level of the program voltage.
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