公开(公告)号：US08773908B2

公开(公告)日：2014-07-08

申请号：US13477161

申请日：2012-05-22

申请人： Youngsun Song ,  Bogeun Kim ,  Ohsuk Kwon ,  Kitae Park ,  Seung-Hwan Shin ,  Sangyong Yoon

发明人： Youngsun Song ,  Bogeun Kim ,  Ohsuk Kwon ,  Kitae Park ,  Seung-Hwan Shin ,  Sangyong Yoon

IPC分类号： G11C16/04 ,  G11C11/56 ,  G11C16/34 ,  G11C16/08

CPC分类号： G11C16/10 ,  G11C11/5621 ,  G11C11/5628 ,  G11C11/5642 ,  G11C16/08 ,  G11C16/34 ,  G11C16/3459

摘要： A nonvolatile memory device includes a memory cell array, a page buffer unit which output a verify-read result, a reference current generating unit which generates a reference current signal, a page buffer decoding unit which outputs currents according to the verify-read result. The nonvolatile memory device further includes an analog bit counting unit which counts the currents, a digital adding unit which calculates an accumulated sum of the counting result, a pass/fail checking unit which outputs a pass signal or fail signal according to the calculation result, and a control unit controlling a program operation.

摘要翻译： 非易失性存储器件包括存储单元阵列，输出验证读取结果的页面缓冲器单元，产生参考电流信号的参考电流产生单元，根据验证读取结果输出电流的页面缓冲器解码单元。 非易失性存储装置还包括对电流进行计数的模拟比特计数单元，计算计数结果的累积和的数字加法单元，根据计算结果输出通过信号或失败信号的通过/失败检查单元， 以及控制程序操作的控制单元。

公开(公告)号：US20120081957A1

公开(公告)日：2012-04-05

申请号：US13246040

申请日：2011-09-27

申请人： Seung-Bum Kim ,  Ohsuk Kwon ,  Dongku Kang ,  Tae-Young Kim ,  Jaewoo Im ,  Moosung Kim ,  Jae-Duk Yu

发明人： Seung-Bum Kim ,  Ohsuk Kwon ,  Dongku Kang ,  Tae-Young Kim ,  Jaewoo Im ,  Moosung Kim ,  Jae-Duk Yu

IPC分类号： G11C16/06 ,  G11C16/04

CPC分类号： G11C16/0483 ,  G11C11/5628 ,  G11C16/30 ,  G11C16/3436

摘要： A word line voltage generating method of a flash memory which includes generating a program voltage using a positive voltage generator; generating a plurality of negative program verification voltages corresponding to a plurality of negative data states using a negative voltage generator; and generating at least one or more program verification voltages corresponding to at least one or more states using the positive voltage generator. Generating a plurality of negative program verification voltages includes generating a first negative verification voltage; discharging an output of the negative voltage generator to become higher than the first negative verification voltage; and performing a negative charge pumping operation until an output of the negative voltage generator reaches a second negative verification voltage level.

摘要翻译： 一种闪存的字线电压产生方法，包括使用正电压发生器产生编程电压; 使用负电压发生器产生对应于多个负数据状态的多个负编程验证电压; 以及使用所述正电压发生器产生对应于至少一个或多个状态的至少一个或多个程序验证电压。 生成多个负编程验证电压包括产生第一负验证电压; 将负电压发生器的输出放电到高于第一负验证电压; 并执行负电荷泵送操作直到负电压发生器的输出达到第二负验证电压电平。

公开(公告)号：US20110287463A1

公开(公告)日：2011-11-24

申请号：US12952116

申请日：2010-11-22

申请人： Hyun Ah Kang ,  Jae Kap Jeong ,  Ohsuk Kwon ,  Doo-Byoung Oh ,  Seonghun Kim

发明人： Hyun Ah Kang ,  Jae Kap Jeong ,  Ohsuk Kwon ,  Doo-Byoung Oh ,  Seonghun Kim

IPC分类号： C12Q1/34

CPC分类号： C12Y302/01023 ,  A61K38/00 ,  C12N9/2471

摘要： The present invention relates to a novel beta-galactosidase derived from Streptococcus pneumoniae, a BgaC protein exhibiting the enzyme activity, and a method for using the same. The protein can be used in the modification and analysis of sugar chain and used as an anti-cancer agent.

摘要翻译： 本发明涉及来自肺炎链球菌的新型β-半乳糖苷酶，表现出酶活性的BgaC蛋白质及其使用方法。 该蛋白质可用于糖链的修饰和分析，并用作抗癌剂。

公开(公告)号：US08705273B2

公开(公告)日：2014-04-22

申请号：US13323868

申请日：2011-12-13

申请人： Moosung Kim ,  Jaewoo Im ,  Jae-Duk Yu ,  Kitae Park ,  Ohsuk Kwon

发明人： Moosung Kim ,  Jaewoo Im ,  Jae-Duk Yu ,  Kitae Park ,  Ohsuk Kwon

IPC分类号： G11C16/04

CPC分类号： G11C11/5628 ,  G11C5/14 ,  G11C5/143 ,  G11C5/145 ,  G11C5/147 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/30 ,  G11C16/3459 ,  G11C2211/5641

摘要： A negative voltage generator includes a direct current voltage generator configured to generate a direct current voltage, a reference voltage generator configured to generate a reference voltage, an oscillator configured to generate an oscillation clock, a charge pump configured to generate a negative voltage in response to a pump clock, and a voltage detector. The voltage detector is configured to detect the negative voltage by comparing a division voltage, obtained by voltage dividing the direct current voltage, with the reference voltage, and to generate the pump clock corresponding to the detected negative voltage based on the oscillation clock.

摘要翻译： 负电压发生器包括被配置为产生直流电压的直流电压发生器，被配置为产生参考电压的参考电压发生器，被配置为产生振荡时钟的振荡器，配置成响应于 泵时钟和电压检测器。 电压检测器被配置为通过将通过分压直流电压获得的分压与参考电压进行比较来检测负电压，并且基于振荡时钟产生对应于检测到的负电压的泵时钟。

公开(公告)号：US20100097863A1

公开(公告)日：2010-04-22

申请号：US12461934

申请日：2009-08-28

申请人： Moosung Kim ,  Ohsuk Kwon

发明人： Moosung Kim ,  Ohsuk Kwon

IPC分类号： G11C16/04

CPC分类号： G11C16/12 ,  G06F12/0246 ,  G06F2212/7201 ,  G06F2212/7206 ,  G11C7/1048 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/24 ,  G11C16/3418 ,  G11C16/3427 ,  G11C16/3454 ,  G11C2211/5621

摘要： A program method of a nonvolatile memory device according to example embodiments includes a operation (a) of detecting a level of a program voltage; and a operation (b) of providing a unselected word line voltage and a bit line precharge voltage having a variable level respectively according to the detected level of the program voltage.

摘要翻译： 根据示例实施例的非易失性存储器件的编程方法包括检测编程电压电平的操作（a） 以及根据检测到的编程电压的电平分别提供具有可变电平的未选字线电压和位线预充电电压的操作（b）。

公开(公告)号：US08693248B2

公开(公告)日：2014-04-08

申请号：US12981934

申请日：2010-12-30

申请人： Ohsuk Kwon

发明人： Ohsuk Kwon

IPC分类号： G11C11/34

CPC分类号： G11C16/12 ,  G11C7/02

摘要： Provided are methods of programming a nonvolatile data storage device including memory blocks sharing a block word line. The methods may include selecting the memory blocks, and the selected memory blocks may include a first memory block that is to be programmed and a second memory block that is to be program-inhibited. The methods may also include applying a program voltage to a selected word line of the first memory block. The methods may further include applying a bipolar prohibition voltage to word lines of the second memory block.

摘要翻译： 提供了对包含共享块字线的存储块的非易失性数据存储装置进行编程的方法。 所述方法可以包括选择存储器块，并且所选择的存储器块可以包括要编程的第一存储器块和要被编程禁止的第二存储器块。 所述方法还可以包括将编程电压施加到所述第一存储器块的选定字线。 所述方法还可以包括将双极禁止电压施加到第二存储器块的字线。

公开(公告)号：US08559229B2

公开(公告)日：2013-10-15

申请号：US13246040

申请日：2011-09-27

申请人： Seung-Gum Kim ,  Ohsuk Kwon ,  Dongku Kang ,  Tae-Young Kim ,  Jaewoo Im ,  Moosung Kim ,  Jae-Duk Yu

发明人： Seung-Gum Kim ,  Ohsuk Kwon ,  Dongku Kang ,  Tae-Young Kim ,  Jaewoo Im ,  Moosung Kim ,  Jae-Duk Yu

IPC分类号： G11C11/34

CPC分类号： G11C16/0483 ,  G11C11/5628 ,  G11C16/30 ,  G11C16/3436

摘要： A word line voltage generating method of a flash memory which includes generating a program voltage using a positive voltage generator; generating a plurality of negative program verification voltages corresponding to a plurality of negative data states using a negative voltage generator; and generating at least one or more program verification voltages corresponding to at least one or more states using the positive voltage generator. Generating a plurality of negative program verification voltages includes generating a first negative verification voltage; discharging an output of the negative voltage generator to become higher than the first negative verification voltage; and performing a negative charge pumping operation until an output of the negative voltage generator reaches a second negative verification voltage level.

摘要翻译： 一种闪存的字线电压产生方法，包括使用正电压发生器产生编程电压; 使用负电压发生器产生对应于多个负数据状态的多个负编程验证电压; 以及使用所述正电压发生器产生对应于至少一个或多个状态的至少一个或多个程序验证电压。 生成多个负编程验证电压包括产生第一负验证电压; 将负电压发生器的输出放电到高于第一负验证电压; 并执行负电荷泵送操作直到负电压发生器的输出达到第二负验证电压电平。

公开(公告)号：US08508996B2

公开(公告)日：2013-08-13

申请号：US12461934

申请日：2009-08-28

申请人： Moosung Kim ,  Ohsuk Kwon

发明人： Moosung Kim ,  Ohsuk Kwon

IPC分类号： G11C11/34

CPC分类号： G11C16/12 ,  G06F12/0246 ,  G06F2212/7201 ,  G06F2212/7206 ,  G11C7/1048 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/24 ,  G11C16/3418 ,  G11C16/3427 ,  G11C16/3454 ,  G11C2211/5621

摘要： A program method of a nonvolatile memory device according to example embodiments includes a operation (a) of detecting a level of a program voltage; and a operation (b) of providing a unselected word line voltage and a bit line precharge voltage having a variable level respectively according to the detected level of the program voltage.

公开(公告)号：US20110194366A1

公开(公告)日：2011-08-11

申请号：US12981934

申请日：2010-12-30

申请人： Ohsuk Kwon

发明人： Ohsuk Kwon

IPC分类号： G11C7/00

CPC分类号： G11C16/12 ,  G11C7/02

摘要： Provided are methods of programming a nonvolatile data storage device including memory blocks sharing a block word line. The methods may include selecting the memory blocks, and the selected memory blocks may include a first memory block that is to be programmed and a second memory block that is to be program-inhibited. The methods may also include applying a program voltage to a selected word line of the first memory block. The methods may further include applying a bipolar prohibition voltage to word lines of the second memory block.

摘要翻译： 提供了对包含共享块字线的存储块的非易失性数据存储装置进行编程的方法。 所述方法可以包括选择存储器块，并且所选择的存储器块可以包括要编程的第一存储器块和要被编程禁止的第二存储器块。 所述方法还可以包括将编程电压施加到所述第一存储器块的选定字线。 所述方法还可以包括将双极禁止电压施加到第二存储器块的字线。

公开(公告)号：US20100091576A1

公开(公告)日：2010-04-15

申请号：US12587803

申请日：2009-10-13

申请人： Ohsuk Kwon ,  Kihwan Choi

发明人： Ohsuk Kwon ,  Kihwan Choi

IPC分类号： G11C16/06 ,  G11C16/04

CPC分类号： G11C16/3418 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/3427

摘要： A method of programming a nonvolatile memory device according to the present invention includes precharging bit lines according to data loaded in page buffers; electrically connecting the precharged bit lines to channels corresponding to the bit lines, respectively, to charge the channels; and applying a word line voltage for a program after charging the channels. A channel voltage boosting of each of the channels is determined according to data loaded in adjacent page buffers.

摘要翻译： 根据本发明的非易失性存储器件的编程方法包括根据加载在页缓冲器中的数据预充电位线; 将预充电位线分别电连接到与位线对应的通道，以对通道充电; 以及在对频道充电之后对节目应用字线电压。 根据加载在相邻页面缓冲器中的数据来确定每个通道的通道升压。