发明授权
US08510637B2 Data reading method, memory storage apparatus and memory controller thereof
有权
数据读取方法,存储器存储装置及其存储器控制器
- 专利标题: Data reading method, memory storage apparatus and memory controller thereof
- 专利标题(中): 数据读取方法,存储器存储装置及其存储器控制器
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申请号: US13108004申请日: 2011-05-16
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公开(公告)号: US08510637B2公开(公告)日: 2013-08-13
- 发明人: Chien-Fu Tseng , Kuo-Hsin Lai
- 申请人: Chien-Fu Tseng , Kuo-Hsin Lai
- 申请人地址: TW Miaoli
- 专利权人: Phison Electronics Corp.
- 当前专利权人: Phison Electronics Corp.
- 当前专利权人地址: TW Miaoli
- 代理机构: Jianq Chyun IP Office
- 优先权: TW99111612A 20100414; TW99131626A 20100917; TW100108514A 20110314
- 主分类号: G11C29/00
- IPC分类号: G11C29/00 ; G01R31/30
摘要:
A data reading method for a writable non-volatile memory module having physical pages is provided. The method includes grouping the physical pages into a plurality of physical page groups. The method also includes reading first data from a physical page of a first physical page group by applying a first threshold voltage set. The method still includes, when the first data can be corrected by an error checking and correcting circuit and an error bit number corresponding to the first data is not smaller than an error bit number threshold, calculating compensation voltages for the first threshold voltage set. The method further includes adjusting the first threshold voltage set by the compensation voltages and applying the adjusted first threshold voltage set to read data from the physical pages of the first physical page group. Accordingly, data stored in the rewritable non-volatile memory module can be correctly read.