公开(公告)号：US08289771B2

公开(公告)日：2012-10-16

申请号：US12861089

申请日：2010-08-23

申请人： Chien-Fu Tseng ,  Kuo-Hsin Lai

发明人： Chien-Fu Tseng ,  Kuo-Hsin Lai

IPC分类号： G11C11/34 ,  G11C16/06

CPC分类号： G11C16/3418 ,  G11C11/5628

摘要： A data reading method for a flash memory module is provided. The method includes applying a bit-data-read voltage to get read data from memory cells of the flash memory module. The method also includes setting a minus-adjustment-bit-data-read voltage and a plus-adjustment-bit-data-read voltage corresponding to the bit-data-read voltage based on an error-distribution estimated value and applying the minus-adjustment-bit-data-read voltage and the plus-adjustment-bit-data-read voltage to obtain soft values corresponding to the read data from the memory cells. The method further includes calculating a soft-information estimated value corresponding to each bit of the read data according to the soft-values. Accordingly, the method can effectively obtain soft information.

摘要翻译： 提供了一种用于闪速存储器模块的数据读取方法。 该方法包括应用位数据读取电压以从闪速存储器模块的存储单元获取读取数据。 该方法还包括基于误差分布估计值设置与位数据读取电压相对应的负调整位数据读取电压和正调节位数据读取电压， 调整位数据读取电压和正调节位数据读取电压以获得与来自存储器单元的读取数据相对应的软值。 该方法还包括根据软值计算与读取数据的每个比特相对应的软信息估计值。 因此，该方法可以有效地获得软信息。

公开(公告)号：US20120072805A1

公开(公告)日：2012-03-22

申请号：US12947799

申请日：2010-11-16

申请人： Chien-Fu Tseng ,  Kuo-Hsin Lai

发明人： Chien-Fu Tseng ,  Kuo-Hsin Lai

IPC分类号： G11C29/00 ,  G06F11/16

CPC分类号： G06F11/008 ,  G06F11/1048

摘要： A memory storage device, a memory controller, and a log likelihood ratio (LLR) generation method are provided. A read data corresponding to a first storage state is obtained from memory cells of a flash memory chip in the memory storage device by using bit data read voltages. An error checking and correcting procedure is performed on the read data to obtain a second storage state corresponding to the read data when the read data is written. An amount of storage error is obtained in storage states satisfying a statistic number, and a storage error means that data is in the second storage state when being written and is in the first storage state when being read. A logarithmic operation is executed according to the statistic number, an amount of the storage states, and the amount of storage error to generate a first LLR of the read data.

摘要翻译： 提供了存储器存储装置，存储器控制器和对数似然比（LLR）生成方法。 通过使用位数据读取电压，从存储器存储装置中的闪存芯片的存储单元获得对应于第一存储状态的读取数据。 对读取的数据执行错误检查和校正过程，以在写入读取的数据时获得与读取数据相对应的第二存储状态。 在满足统计数量的存储状态中获得存储错误量，并且存储错误意味着当被写入时数据处于第二存储状态，并且当被读取时处于第一存储状态。 根据统计数量，存储状态的量以及生成读取数据的第一LLR的存储错误量来执行对数运算。

公开(公告)号：US20110317488A1

公开(公告)日：2011-12-29

申请号：US12861089

申请日：2010-08-23

申请人： Chien-Fu Tseng ,  Kuo-Hsin Lai

发明人： Chien-Fu Tseng ,  Kuo-Hsin Lai

IPC分类号： G11C16/06

CPC分类号： G11C16/3418 ,  G11C11/5628

摘要： A data reading method for a flash memory module is provided. The method includes applying a bit-data-read voltage to get read data from memory cells of the flash memory module. The method also includes setting a minus-adjustment-bit-data-read voltage and a plus-adjustment-bit-data-read voltage corresponding to the bit-data-read voltage based on an error-distribution estimated value and applying the minus-adjustment-bit-data-read voltage and the plus-adjustment-bit-data-read voltage to obtain soft values corresponding to the read data from the memory cells. The method further includes calculating a soft-information estimated value corresponding to each bit of the read data according to the soft-values. Accordingly, the method can effectively obtain soft information.

摘要翻译： 提供了一种用于闪速存储器模块的数据读取方法。 该方法包括应用位数据读取电压以从闪速存储器模块的存储单元获取读取数据。 该方法还包括基于误差分布估计值设置与位数据读取电压相对应的负调整位数据读取电压和正调节位数据读取电压， 调整位数据读取电压和正调节位数据读取电压以获得与来自存储器单元的读取数据相对应的软值。 该方法还包括根据软值计算与读取数据的每个比特相对应的软信息估计值。 因此，该方法可以有效地获得软信息。

公开(公告)号：US08832526B2

公开(公告)日：2014-09-09

申请号：US13190487

申请日：2011-07-26

申请人： Chien-Fu Tseng ,  Kuo-Hsin Lai

发明人： Chien-Fu Tseng ,  Kuo-Hsin Lai

IPC分类号： G11C29/00 ,  G06F11/10 ,  H03M13/00 ,  G11C29/50 ,  G11C29/02 ,  G11C29/04 ,  H03M13/15 ,  H03M13/29

CPC分类号： G06F11/1048 ,  G11C29/028 ,  G11C29/50004 ,  G11C2029/0401 ,  G11C2029/0409 ,  G11C2029/0411 ,  H03M13/152 ,  H03M13/2906 ,  H03M13/612

摘要： A data reading method adapted to a rewritable non-volatility memory module having physical blocks is provided, wherein each physical block has a plurality of physical pages. In the data reading method, each physical page is partitioned into bit data areas, where at least one of the bit data areas has a data length different from that of the other bit data areas. Data is written into the bit data areas. Data in each bit data area is corresponding to an ECC frame. The data is read from the bit data areas. Because the at least one of bit data areas has a relatively short data length, the error correction capability is improved and the data can be correctly read. An error bit information is obtained according to the read data. A log likelihood ratio (LLR) lookup table or a threshold voltage is adjusted according to the error bit information.

摘要翻译： 提供了一种适用于具有物理块的可重写非易失性存储器模块的数据读取方法，其中每个物理块具有多个物理页面。 在数据读取方法中，每个物理页面被划分为位数据区域，其中至少一个位数据区域的数据长度与其他位数据区域的数据长度不同。 数据写入位数据区。 每个位数据区域中的数据对应于ECC帧。 从位数据区读取数据。 因为位数据区域中的至少一个具有相对较短的数据长度，所以改进了纠错能力并且可以正确地读取数据。 根据读取的数据获得错误位信息。 根据误差位信息调整对数似然比（LLR）查找表或阈值电压。

公开(公告)号：US08510637B2

公开(公告)日：2013-08-13

申请号：US13108004

申请日：2011-05-16

申请人： Chien-Fu Tseng ,  Kuo-Hsin Lai

发明人： Chien-Fu Tseng ,  Kuo-Hsin Lai

IPC分类号： G11C29/00 ,  G01R31/30

CPC分类号： G11C11/5642 ,  G11C16/10 ,  G11C16/3422 ,  G11C16/349 ,  G11C2029/0411

摘要： A data reading method for a writable non-volatile memory module having physical pages is provided. The method includes grouping the physical pages into a plurality of physical page groups. The method also includes reading first data from a physical page of a first physical page group by applying a first threshold voltage set. The method still includes, when the first data can be corrected by an error checking and correcting circuit and an error bit number corresponding to the first data is not smaller than an error bit number threshold, calculating compensation voltages for the first threshold voltage set. The method further includes adjusting the first threshold voltage set by the compensation voltages and applying the adjusted first threshold voltage set to read data from the physical pages of the first physical page group. Accordingly, data stored in the rewritable non-volatile memory module can be correctly read.

摘要翻译： 提供了一种具有物理页面的可写非易失性存储器模块的数据读取方法。 该方法包括将物理页面分组成多个物理页面组。 该方法还包括通过应用第一阈值电压集从第一物理页组的物理页读取第一数据。 该方法还包括当通过错误检查和校正电路校正第一数据并且与第一数据相对应的错误位数不小于错误位数阈值时，计算第一阈值电压组的补偿电压。 该方法还包括调整由补偿电压设置的第一阈值电压，并将调整后的第一阈值电压设置为从第一物理页组的物理页读取数据。 因此，可以正确地读取存储在可重写非易失性存储器模块中的数据。

公开(公告)号：US08429501B2

公开(公告)日：2013-04-23

申请号：US12947799

申请日：2010-11-16

申请人： Chien-Fu Tseng ,  Kuo-Hsin Lai

发明人： Chien-Fu Tseng ,  Kuo-Hsin Lai

IPC分类号： G06F11/00

CPC分类号： G06F11/008 ,  G06F11/1048

摘要： A memory storage device, a memory controller, and a log likelihood ratio (LLR) generation method are provided. A read data corresponding to a first storage state is obtained from memory cells of a flash memory chip in the memory storage device by using bit data read voltages. An error checking and correcting procedure is performed on the read data to obtain a second storage state corresponding to the read data when the read data is written. An amount of storage error is obtained in storage states satisfying a statistic number, and a storage error means that data is in the second storage state when being written and is in the first storage state when being read. A logarithmic operation is executed according to the statistic number, an amount of the storage states, and the amount of storage error to generate a first LLR of the read data.

摘要翻译： 提供了存储器存储装置，存储器控制器和对数似然比（LLR）生成方法。 通过使用位数据读取电压，从存储器存储装置中的闪存芯片的存储单元获得对应于第一存储状态的读取数据。 对读取的数据执行错误检查和校正过程，以在写入读取的数据时获得与读取数据相对应的第二存储状态。 在满足统计数量的存储状态中获得存储错误量，并且存储错误意味着当被写入时数据处于第二存储状态，并且当被读取时处于第一存储状态。 根据统计数量，存储状态的量以及生成读取数据的第一LLR的存储错误量来执行对数运算。

公开(公告)号：US20110258495A1

公开(公告)日：2011-10-20

申请号：US12788649

申请日：2010-05-27

申请人： Chien-Fu Tseng ,  Kuo-Hsin Lai ,  Li-Chun Liang

发明人： Chien-Fu Tseng ,  Kuo-Hsin Lai ,  Li-Chun Liang

IPC分类号： G06F11/00

CPC分类号： G11C16/3418 ,  G11C2029/0411

摘要： Methods of calculating a compensation voltage and adjusting a threshold voltage, a memory apparatus, and a controller are provided. In the present invention, data is written into a rewritable non-volatility memory, and the data is then read from the rewritable non-volatility memory and compared with the previously written data to obtain error bit information. The compensation voltage of the threshold voltage is calculated according to the error bit information, and the threshold voltage is adjusted according to the compensation voltage.

摘要翻译： 提供了计算补偿电压和调整阈值电压的方法，存储装置和控制器。 在本发明中，将数据写入可重写的非易失性存储器中，然后从可重写的非易失性存储器读取数据，并将其与先前写入的数据进行比较，以获得错误位信息。 根据误差位信息计算阈值电压的补偿电压，并根据补偿电压调整阈值电压。

公开(公告)号：US08386860B2

公开(公告)日：2013-02-26

申请号：US12788649

申请日：2010-05-27

申请人： Chien-Fu Tseng ,  Kuo-Hsin Lai ,  Li-Chun Liang

发明人： Chien-Fu Tseng ,  Kuo-Hsin Lai ,  Li-Chun Liang

IPC分类号： G11C29/00

CPC分类号： G11C16/3418 ,  G11C2029/0411

摘要： Methods of calculating a compensation voltage and adjusting a threshold voltage, a memory apparatus, and a controller are provided. In the present invention, data is written into a rewritable non-volatility memory, and the data is then read from the rewritable non-volatility memory and compared with the previously written data to obtain error bit information. The compensation voltage of the threshold voltage is calculated according to the error bit information, and the threshold voltage is adjusted according to the compensation voltage.

摘要翻译： 提供了计算补偿电压和调整阈值电压的方法，存储装置和控制器。 在本发明中，将数据写入可重写的非易失性存储器中，然后从可重写的非易失性存储器读取数据，并将其与先前写入的数据进行比较，以获得错误位信息。 根据误差位信息计算阈值电压的补偿电压，并根据补偿电压调整阈值电压。

公开(公告)号：US20120311402A1

公开(公告)日：2012-12-06

申请号：US13190487

申请日：2011-07-26

申请人： Chien-Fu Tseng ,  Kuo-Hsin Lai

发明人： Chien-Fu Tseng ,  Kuo-Hsin Lai

IPC分类号： H03M13/05 ,  G06F11/10

CPC分类号： G06F11/1048 ,  G11C29/028 ,  G11C29/50004 ,  G11C2029/0401 ,  G11C2029/0409 ,  G11C2029/0411 ,  H03M13/152 ,  H03M13/2906 ,  H03M13/612

摘要： A data reading method adapted to a rewritable non-volatility memory module having physical blocks is provided, wherein each physical block has a plurality of physical pages. In the data reading method, each physical page is partitioned into bit data areas, where at least one of the bit data areas has a data length different from that of the other bit data areas. Data is written into the bit data areas. Data in each bit data area is corresponding to an ECC frame. The data is read from the bit data areas. Because the at least one of bit data areas has a relatively short data length, the error correction capability is improved and the data can be correctly read. An error bit information is obtained according to the read data. A log likelihood ratio (LLR) lookup table or a threshold voltage is adjusted according to the error bit information.

摘要翻译： 提供了一种适用于具有物理块的可重写非易失性存储器模块的数据读取方法，其中每个物理块具有多个物理页面。 在数据读取方法中，每个物理页面被划分为位数据区域，其中至少一个位数据区域的数据长度与其他位数据区域的数据长度不同。 数据写入位数据区。 每个位数据区域中的数据对应于ECC帧。 从位数据区读取数据。 因为位数据区域中的至少一个具有相对较短的数据长度，所以改进了纠错能力并且可以正确地读取数据。 根据读取的数据获得错误位信息。 根据误差位信息调整对数似然比（LLR）查找表或阈值电压。

公开(公告)号：US20110258496A1

公开(公告)日：2011-10-20

申请号：US13108004

申请日：2011-05-16

申请人： Chien-Fu Tseng ,  Kuo-Hsin Lai

发明人： Chien-Fu Tseng ,  Kuo-Hsin Lai

IPC分类号： G06F11/00 ,  G06F11/07

CPC分类号： G11C11/5642 ,  G11C16/10 ,  G11C16/3422 ,  G11C16/349 ,  G11C2029/0411

摘要： A data reading method for a writable non-volatile memory module having physical pages is provided. The method includes grouping the physical pages into a plurality of physical page groups. The method also includes reading first data from a physical page of a first physical page group by applying a first threshold voltage set. The method still includes, when the first data can be corrected by an error checking and correcting circuit and an error bit number corresponding to the first data is not smaller than an error bit number threshold, calculating compensation voltages for the first threshold voltage set. The method further includes adjusting the first threshold voltage set by the compensation voltages and applying the adjusted first threshold voltage set to read data from the physical pages of the first physical page group. Accordingly, data stored in the rewritable non-volatile memory module can be correctly read.

摘要翻译： 提供了一种具有物理页面的可写非易失性存储器模块的数据读取方法。 该方法包括将物理页面分组成多个物理页面组。 该方法还包括通过应用第一阈值电压集从第一物理页组的物理页读取第一数据。 该方法还包括当通过错误检查和校正电路校正第一数据并且与第一数据相对应的错误位数不小于错误位数阈值时，计算第一阈值电压组的补偿电压。 该方法还包括调整由补偿电压设置的第一阈值电压，并将调整后的第一阈值电压设置为从第一物理页组的物理页读取数据。 因此，可以正确地读取存储在可重写非易失性存储器模块中的数据。