发明授权
- 专利标题： Process to remove Ni and Pt residues for NiPtSi applications
- 专利标题（中）： 去除NiPtSi应用的Ni和Pt残留物的工艺
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申请号： US13296444申请日： 2011-11-15
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公开(公告)号： US08513117B2公开(公告)日： 2013-08-20
- 发明人: Anh Duong , Sean Barstow , Clemens Fitz , John Foster , Olov Karlsson , Bei Li , James Mavrinac
- 申请人： Anh Duong , Sean Barstow , Clemens Fitz , John Foster , Olov Karlsson , Bei Li , James Mavrinac
- 申请人地址： US CA San Jose
- 专利权人： Intermolecular, Inc.,GLOBALFOUNDRIES Inc.
- 当前专利权人： Intermolecular, Inc.,GLOBALFOUNDRIES Inc.
- 当前专利权人地址： US CA San Jose
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
The invention discloses a method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process. Embodiments of the invention provide a multi-step cleaning process, comprising exposing the substrate to a nitric acid solution after a first anneal, followed by an aqua regia solution after a second anneal. The substrate can be optionally exposed to a hydrochloric acid solution afterward to completely remove any remaining platinum residues.
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