发明授权
- 专利标题： Semiconductor structure and method of manufacturing
- 专利标题（中）： 半导体结构及制造方法
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申请号： US13212469申请日： 2011-08-18
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公开(公告)号： US08513143B2公开(公告)日： 2013-08-20
- 发明人: Mei-Hsuan Lin , Chih-Hsun Lin , Chih-Kang Chao , Ling-Sung Wang
- 申请人： Mei-Hsuan Lin , Chih-Hsun Lin , Chih-Kang Chao , Ling-Sung Wang
- 申请人地址： TW
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW
- 代理机构： Lowe Hauptman & Ham, LLP
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; H01L21/469
摘要：
The present application discloses a method of manufacturing a semiconductor structure. According to at least one embodiment, a first etch stop layer is formed over a conductive feature and a substrate, and the conductive feature is positioned over the substrate. A second etch stop layer is formed over the first etch stop layer. A first etch is performed to form an opening in the second etch stop layer, and the opening exposes a portion of the first etch stop layer. A second etch is performed to extend the opening downwardly by removing a portion of the exposed first etch stop layer, and the extended opening exposes a portion of the conductive feature.
公开/授权文献
- US20130043590A1 SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING 公开/授权日：2013-02-21
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