发明授权
US08513727B2 Surrounding stacked gate multi-gate FET structure nonvolatile memory device
有权
周边堆叠栅极多栅极FET结构非易失性存储器件
- 专利标题： Surrounding stacked gate multi-gate FET structure nonvolatile memory device
- 专利标题（中）： 周边堆叠栅极多栅极FET结构非易失性存储器件
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申请号： US12892879申请日： 2010-09-28
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公开(公告)号： US08513727B2公开(公告)日： 2013-08-20
- 发明人: Deyuan Xiao , Lily Jiang , Gary Chen , Roger Lee
- 申请人： Deyuan Xiao , Lily Jiang , Gary Chen , Roger Lee
- 申请人地址： CN Shanghai CN Beijing
- 专利权人： Semiconductor Manufacturing International (Shanghai) Corporation,Semiconductor Manufacturing International (Beijing) Corporation
- 当前专利权人： Semiconductor Manufacturing International (Shanghai) Corporation,Semiconductor Manufacturing International (Beijing) Corporation
- 当前专利权人地址： CN Shanghai CN Beijing
- 代理机构： Kilpatrick Townsend & Stockton LLP
- 优先权： CN200910057968 20090928
- 主分类号： H01L29/788
- IPC分类号： H01L29/788
摘要：
Nonvolatile memory devices having a low off state leakage current and an excellent data retention time characteristics. The present invention provides a surrounding stacked gate fin field effect transistor nonvolatile memory structure comprising a silicon-on-insulator substrate of a first conductivity type and a fin active region projecting from an upper surface of the insulator. The structure further includes a tunnel oxide layer formed on the fin active region and a first gate electrode disposed on the tunnel oxide layer and upper surface of the insulator. Additionally, the structure includes an oxide/nitride/oxide (ONO) composite layer formed on the first gate electrode, a second gate electrode formed on the ONO composite layer and patterned so as to define a predetermined area of the ONO composite layer. The structure further includes a dielectric spacer formed on a sidewall of the second gate electrode and source/drain regions formed in the fin active region on both sides of the second gate electrode.
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