发明授权
- 专利标题: Methods of forming copper-based conductive structures on an integrated circuit device
- 专利标题(中): 在集成电路器件上形成铜基导电结构的方法
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申请号: US13422295申请日: 2012-03-16
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公开(公告)号: US08517769B1公开(公告)日: 2013-08-27
- 发明人: Sean X. Lin , Ming He , Xunyuan Zhang , Larry Zhao
- 申请人: Sean X. Lin , Ming He , Xunyuan Zhang , Larry Zhao
- 申请人地址: KY Grand Cayman
- 专利权人: GlobalFoundries Inc.
- 当前专利权人: GlobalFoundries Inc.
- 当前专利权人地址: KY Grand Cayman
- 代理机构: Williams, Morgan & Amerson, P.C.
- 主分类号: H01L21/4763
- IPC分类号: H01L21/4763 ; H01L21/00
摘要:
Disclosed herein are various methods of forming copper-based conductive structures on integrated circuit devices. In one example, the method includes the steps of forming a trench/via in a layer of insulating material, forming a copper-based seed layer above the layer of insulating material and in the trench/via, performing a heating process on the copper-based seed layer to increase an amount of the copper-based seed layer positioned proximate a bottom of the trench/via, performing an etching process on said copper-based seed layer and performing an electroless copper deposition process to fill the trench/via with a copper-based material.