Invention Grant
- Patent Title: Method of controlling etch microloading for a tungsten-containing layer
- Patent Title (中): 控制含钨层的蚀刻微负载的方法
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Application No.: US12744012Application Date: 2008-11-13
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Publication No.: US08518282B2Publication Date: 2013-08-27
- Inventor: Wonchul Lee , Qian Fu , Shenjian Liu , Bryan Pu
- Applicant: Wonchul Lee , Qian Fu , Shenjian Liu , Bryan Pu
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Beyer Law Group LLP
- International Application: PCT/US2008/083412 WO 20081113
- International Announcement: WO2009/067381 WO 20090528
- Main IPC: B44C1/22
- IPC: B44C1/22 ; H01L21/3065
Abstract:
A method for etching features of different aspect ratios in a tungsten containing layer is provided. An etch gas is provided containing a tungsten etch component and a deposition component. A plasma is formed from the provided etch gas. A tungsten containing layer patterned with wide and narrow features is etched with the provided plasma.
Public/Granted literature
- US20110151670A1 METHOD OF CONTROLLING ETCH MICROLOADING FOR A TUNGSTEN-CONTAINING LAYER Public/Granted day:2011-06-23
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