Semiconductor device with junction field-effect transistor and manufacturing method of the same

Invention Grant

US08519452B2 Semiconductor device with junction field-effect transistor and manufacturing method of the same 有权

Title translation: 具有结型场效应晶体管的半导体器件及其制造方法

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Patent Title: Semiconductor device with junction field-effect transistor and manufacturing method of the same
Patent Title (中): 具有结型场效应晶体管的半导体器件及其制造方法
Application No.: US13248173

Application Date: 2011-09-29
Publication No.: US08519452B2

Publication Date: 2013-08-27
Inventor: Rajesh Kumar Malhan
Applicant: Rajesh Kumar Malhan
Applicant Address: JP Kariya
Assignee: DENSO CORPORATION
Current Assignee: DENSO CORPORATION
Current Assignee Address: JP Kariya
Agency: Posz Law Group, PLC
Priority: JP2010-221449 20100930
Main IPC: H01L29/812
IPC: H01L29/812 ; H01L21/337 ; H01L29/768

Semiconductor device with junction field-effect transistor and manufacturing method of the same

Abstract:

A semiconductor device with a JFET is disclosed. The semiconductor device includes a trench and a contact embedded layer formed in the trench. A gate wire is connected to the contact embedded layer, so that the gate wire is connected to an embedded gate layer via the contact embedded layer. In this configuration, it is possible to downsize a contact structure between the embedded gate layer and the gate wire.

Abstract(Chinese):

公开了一种具有JFET的半导体器件。半导体器件包括形成在沟槽中的沟槽和接触嵌入层。栅极线连接到触点嵌入层，使得栅极线经由接触嵌入层连接到嵌入式栅极层。在这种结构中，可以减小嵌入式栅极层与栅极线之间的接触结构。

Public/Granted literature

US20120080728A1 SEMICONDUCTOR DEVICE WITH JUNCTION FIELD-EFFECT TRANSISTOR AND MANUFACTURING METHOD OF THE SAME Public/Granted day:2012-04-05

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的
H01L29/68	..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/76	...单极器件
H01L29/772	....场效应晶体管
H01L29/80	.....由PN结或其他整流结栅产生场效应的
H01L29/812	......带有肖特基栅的