Invention Grant
US08519484B2 Semiconductor devices having dual trench, methods of fabricating the same, and electronic system having the same
有权
具有双沟槽的半导体器件及其制造方法以及具有该半导体器件的电子系统
- Patent Title: Semiconductor devices having dual trench, methods of fabricating the same, and electronic system having the same
- Patent Title (中): 具有双沟槽的半导体器件及其制造方法以及具有该半导体器件的电子系统
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Application No.: US13368556Application Date: 2012-02-08
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Publication No.: US08519484B2Publication Date: 2013-08-27
- Inventor: Dong-Won Kim , Jae-Hwang Sim , Keon-Soo Kim , Young-Ho Lee
- Applicant: Dong-Won Kim , Jae-Hwang Sim , Keon-Soo Kim , Young-Ho Lee
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Onello & Mello, LLP
- Priority: KR10-2010-0000997 20100106
- Main IPC: H01L21/70
- IPC: H01L21/70

Abstract:
A semiconductor device having a dual trench and methods of fabricating the same, a semiconductor module, an electronic circuit board, and an electronic system are provided. The semiconductor device includes a semiconductor substrate having a cell region including a cell trench and a peripheral region including a peripheral trench. The cell trench is filled with a core insulating material layer, and the peripheral trench is filled with a padding insulating material layer conformably formed on an inner surface thereof and a core insulating material layer formed on an inner surface of the padding insulating material layer. The core insulating material layer has a greater fluidity than the padding insulating material layer.
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