Invention Grant
- Patent Title: Method for manufacturing a micromechanical diaphragm structure having access from the rear of the substrate
- Patent Title (中): 用于制造从衬底的后部进入的微机械膜结构的方法
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Application No.: US12737037Application Date: 2009-04-21
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Publication No.: US08519494B2Publication Date: 2013-08-27
- Inventor: Torsten Kramer , Marcus Ahles , Armin Grundmann , Kathrin Knese , Hubert Benzel , Gregor Schuermann , Simon Armbruster
- Applicant: Torsten Kramer , Marcus Ahles , Armin Grundmann , Kathrin Knese , Hubert Benzel , Gregor Schuermann , Simon Armbruster
- Applicant Address: DE Stuttgart
- Assignee: Robert Bosch GmbH
- Current Assignee: Robert Bosch GmbH
- Current Assignee Address: DE Stuttgart
- Agency: Kenyon & Kenyon LLP
- Priority: DE102008002332 20080610
- International Application: PCT/EP2009/054698 WO 20090421
- International Announcement: WO2009/149980 WO 20091217
- Main IPC: G01P15/08
- IPC: G01P15/08

Abstract:
A method for manufacturing a micromechanical diaphragm structure having access from the rear of the substrate includes: n-doping at least one contiguous lattice-type area of a p-doped silicon substrate surface; porously etching a substrate area beneath the n-doped lattice structure; producing a cavity in this substrate area beneath the n-doped lattice structure; growing a first monocrystalline silicon epitaxial layer on the n-doped lattice structure; at least one opening in the n-doped lattice structure being dimensioned in such a way that it is not closed by the growing first epitaxial layer but instead forms an access opening to the cavity; an oxide layer being created on the cavity wall; a rear access to the cavity being created, the oxide layer on the cavity wall acting as an etch stop layer; and the oxide layer being removed in the area of the cavity.
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