发明授权
US08519508B2 Semiconductor device having an anti-fuse element and a transistor with a pocket region
有权
具有抗熔丝元件的半导体器件和具有口袋区域的晶体管
- 专利标题： Semiconductor device having an anti-fuse element and a transistor with a pocket region
- 专利标题（中）： 具有抗熔丝元件的半导体器件和具有口袋区域的晶体管
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申请号： US12938662申请日： 2010-11-03
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公开(公告)号： US08519508B2公开(公告)日： 2013-08-27
- 发明人: Yoshitaka Kubota , Hiroshi Tsuda , Kenichi Hidaka , Takuji Onuma , Hiromichi Takaoka
- 申请人： Yoshitaka Kubota , Hiroshi Tsuda , Kenichi Hidaka , Takuji Onuma , Hiromichi Takaoka
- 申请人地址： JP Kanagawa
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 当前专利权人地址： JP Kanagawa
- 代理机构： Young & Thompson
- 优先权： JP2009-255379 20091106
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A semiconductor device has a conventional NMOS transistor and an NMOS transistor functioning as an anti-fuse element and having an n type channel region. The conventional NMOS transistor is equipped with an n type extension region and a p type pocket region, while the anti-fuse element is not equipped with an extension region and a pocket region. This makes it possible to improve the performance of the transistor and at the same time improve the characteristics of the anti-fuse element after breakdown of its gate dielectric film.
公开/授权文献
- US20110108923A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 公开/授权日：2011-05-12
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