发明授权
US08519541B2 Semiconductor device having plural conductive layers disposed within dielectric layer
有权
具有设置在电介质层内的多个导电层的半导体器件
- 专利标题： Semiconductor device having plural conductive layers disposed within dielectric layer
- 专利标题（中）： 具有设置在电介质层内的多个导电层的半导体器件
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申请号： US12228764申请日： 2008-08-14
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公开(公告)号： US08519541B2公开(公告)日： 2013-08-27
- 发明人: Tuung Luoh , Chin-Ta Su , Ta-Hung Yang , Kuang-Chao Chen
- 申请人： Tuung Luoh , Chin-Ta Su , Ta-Hung Yang , Kuang-Chao Chen
- 申请人地址： TW Hsinchu
- 专利权人： MACRONIX International Co., Ltd.
- 当前专利权人： MACRONIX International Co., Ltd.
- 当前专利权人地址： TW Hsinchu
- 代理机构： J.C. Patents
- 主分类号： H01L23/532
- IPC分类号： H01L23/532
摘要：
A method for manufacturing a semiconductor device is disclosed. A semiconductor substrate such as bare silicon is provided, and a dielectric layer is formed over the semiconductor substrate. An opening is provided within the dielectric layer by removing a portion of the dielectric layer. A conformal first conductive layer is formed over the dielectric layer and the opening. A conformal second conductive layer is formed over the first conductive layer. A conformal barrier layer is formed over the second conductive layer.
公开/授权文献
- US20100038786A1 Method for manufacturing a semiconductor device 公开/授权日：2010-02-18
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