发明授权
- 专利标题： Memory controller and memory system
- 专利标题（中）： 内存控制器和内存系统
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申请号： US12768047申请日： 2010-04-27
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公开(公告)号： US08522114B2公开(公告)日： 2013-08-27
- 发明人: Woo tae Chang , Yong tae Yim
- 申请人： Woo tae Chang , Yong tae Yim
- 申请人地址： KR Suwon-si, Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si, Gyeonggi-do
- 代理机构： Volentine & Whitt, PLLC
- 优先权： KR10-2009-0038358 20090430
- 主分类号： G11C29/00
- IPC分类号： G11C29/00
摘要：
A memory system is provided. The memory system includes a nonvolatile memory and a controller. The nonvolatile memory includes a memory cell array and a read/write circuit configured to perform a read/write operation in the memory cell array during a read operation. The controller is configured to receive the read data from the nonvolatile memory, perform an error detection and correction operation on the read data. Upon detecting an error in a received portion of the read data, the controller is further configured to halt further transmission of the read data from the nonvolatile memory, perform the error detection and correction operation on the received portion of the read data to correct the detected error. After correcting the detected error in the received portion of the read data, the controller is configured to resume transmission of the read data from the nonvolatile memory.
公开/授权文献
- US20100281342A1 MEMORY CONTROLLER AND MEMORY SYSTEM 公开/授权日：2010-11-04
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