发明授权
- 专利标题： Methods for forming back contact electrodes for cadmium telluride photovoltaic cells
- 专利标题（中）： 形成碲化镉光电池的接触电极的方法
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申请号： US12765225申请日： 2010-04-22
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公开(公告)号： US08524524B2公开(公告)日： 2013-09-03
- 发明人: Bastiaan Arie Korevaar , Juan Carlos Rojo , Roman Shuba
- 申请人： Bastiaan Arie Korevaar , Juan Carlos Rojo , Roman Shuba
- 申请人地址： US NY Niskayuna
- 专利权人： General Electric Company
- 当前专利权人： General Electric Company
- 当前专利权人地址： US NY Niskayuna
- 代理商 Penny A. Clarke
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A method for forming a back contact for a photovoltaic cell that includes at least one semiconductor layer is provided. The method includes applying a continuous film of a chemically active material on a surface of the semiconductor layer and activating the chemically active material such that the activated material etches the surface of the semiconductor layer. The method further includes removing the continuous film of the activated material from the photovoltaic cell and depositing a metal contact layer on the etched surface of the semiconductor layer.
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