发明授权
- 专利标题： Susceptor with backside area of constant emissivity
- 专利标题（中）： 受体具有不断发射率的背面积
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申请号： US13530238申请日： 2012-06-22
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公开(公告)号： US08524555B2公开(公告)日： 2013-09-03
- 发明人: Errol Sanchez , David K. Carlson , Craig Metzner
- 申请人： Errol Sanchez , David K. Carlson , Craig Metzner
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Servilla Whitney LLC
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238
摘要：
Methods and apparatus for providing constant emissivity of the backside of susceptors are described. Provided is a method comprising: providing a susceptor in a deposition chamber, the susceptor comprising a susceptor plate and a layer comprising an oxide, a nitride, an oxynitride, or combinations thereof, the layer being stable in the presence of the reactive process gases; and locating the wafer on a support surface of the susceptor plate. The method can further comprise selectively depositing an epitaxial layer or a non-epitaxial layer on a surface of the wafer. The method can also further comprise selectively etching to maintain the oxide, nitride, oxynitride, or combinations thereof layer.
公开/授权文献
- US20120282714A1 SUSCEPTOR WITH BACKSIDE AREA OF CONSTANT EMISSIVITY 公开/授权日：2012-11-08
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