发明授权
US08524558B2 Split gate with different gate materials and work functions to reduce gate resistance of ultra high density MOSFET
有权
分闸具有不同的栅极材料和工作功能，可降低超高密度MOSFET的栅极电阻
- 专利标题： Split gate with different gate materials and work functions to reduce gate resistance of ultra high density MOSFET
- 专利标题（中）： 分闸具有不同的栅极材料和工作功能，可降低超高密度MOSFET的栅极电阻
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申请号： US13200882申请日： 2011-10-04
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公开(公告)号： US08524558B2公开(公告)日： 2013-09-03
- 发明人: Sung-Shan Tai , YongZhong Hu
- 申请人： Sung-Shan Tai , YongZhong Hu
- 申请人地址： US CA Sunnyvale
- 专利权人： Alpha and Omega Semiconductor Incorporated
- 当前专利权人： Alpha and Omega Semiconductor Incorporated
- 当前专利权人地址： US CA Sunnyvale
- 代理商 Bo-In Lin
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
This invention discloses a trenched metal oxide semiconductor field effect transistor (MOSFET) cell. The trenched MOSFET cell includes a trenched gate opened from a top surface of the semiconductor substrate surrounded by a source region encompassed in a body region above a drain region disposed on a bottom surface of a substrate. The trenched gate further includes at least two mutually insulated trench-filling segments each filled with materials of different work functions. In an exemplary embodiment, the trenched gate includes a polysilicon segment at a bottom portion of the trenched gate and a metal segment at a top portion of the trenched gate.
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