发明授权
- 专利标题： Silicon carbide semiconductor device
- 专利标题（中）： 碳化硅半导体器件
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申请号： US13450639申请日： 2012-04-19
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公开(公告)号： US08525223B2公开(公告)日： 2013-09-03
- 发明人: Hiroki Watanabe , Shinichiro Miyahara , Masahiro Sugimoto , Hidefumi Takaya , Yukihiko Watanabe , Narumasa Soejima , Tsuyoshi Ishikawa
- 申请人： Hiroki Watanabe , Shinichiro Miyahara , Masahiro Sugimoto , Hidefumi Takaya , Yukihiko Watanabe , Narumasa Soejima , Tsuyoshi Ishikawa
- 申请人地址： JP Kariya JP Toyota
- 专利权人： DENSO CORPORATION,Toyota Jidosha Kabushiki Kaisha
- 当前专利权人： DENSO CORPORATION,Toyota Jidosha Kabushiki Kaisha
- 当前专利权人地址： JP Kariya JP Toyota
- 代理机构： Posz Law Group, PLC
- 优先权： JP2011-101207 20110428
- 主分类号： H01L21/02
- IPC分类号： H01L21/02
摘要：
A SiC semiconductor device includes: a SiC substrate including a first or second conductive type layer and a first conductive type drift layer and including a principal surface having an offset direction; a trench disposed on the drift layer and having a longitudinal direction; and a gate electrode disposed in the trench via a gate insulation film. A sidewall of the trench provides a channel formation surface. The vertical semiconductor device flows current along with the channel formation surface of the trench according to a gate voltage applied to the gate electrode. The offset direction of the SiC substrate is perpendicular to the longitudinal direction of the trench.
公开/授权文献
- US20120273801A1 SILICON CARBIDE SEMICONDUCTOR DEVICE 公开/授权日：2012-11-01