公开(公告)号：US20130330896A1

公开(公告)日：2013-12-12

申请号：US14000901

申请日：2012-09-04

申请人： Shinichiro Miyahara ,  Toshimasa Yamamoto ,  Hidefumi Takaya ,  Masahiro Sugimoto ,  Yukihiko Watanabe ,  Narumasa Soejima ,  Tsuyoshi Ishikawa

发明人： Shinichiro Miyahara ,  Toshimasa Yamamoto ,  Hidefumi Takaya ,  Masahiro Sugimoto ,  Yukihiko Watanabe ,  Narumasa Soejima ,  Tsuyoshi Ishikawa

IPC分类号： H01L29/66

CPC分类号： H01L29/66666 ,  H01L21/3065 ,  H01L29/1608 ,  H01L29/34 ,  H01L29/4236 ,  H01L29/66068 ,  H01L29/7813

摘要： A manufacturing method of a silicon carbide semiconductor device includes: forming a drift layer on a silicon carbide substrate; forming a base layer on or in a surface portion of the drift layer; forming a source region in a surface portion of the base layer; forming a trench to penetrate the base layer and to reach the drift layer; forming a gate electrode on a gate insulation film in the trench; forming a source electrode electrically connected to the source region and the base layer; and forming a drain electrode on a back surface of the substrate. The forming of the trench includes: flattening a substrate surface; and etching to form the trench after flattening.

摘要翻译： 碳化硅半导体器件的制造方法包括：在碳化硅衬底上形成漂移层; 在漂移层的表面部分上或其中形成基底层; 在所述基底层的表面部分中形成源区; 形成沟槽以穿透基层并到达漂移层; 在沟槽中的栅极绝缘膜上形成栅电极; 形成与源极区域和基极层电连接的源电极; 以及在所述基板的背面上形成漏电极。 沟槽的形成包括：使基底表面变平; 并进行蚀刻以在平坦化之后形成沟槽。

公开(公告)号：US20120181551A1

公开(公告)日：2012-07-19

申请号：US13348781

申请日：2012-01-12

申请人： Shinichiro Miyahara ,  Hidefumi Takaya ,  Masahiro Sugimoto ,  Yukihiko Watanabe ,  Narumasa Soejima ,  Tsuyoshi Ishikawa

发明人： Shinichiro Miyahara ,  Hidefumi Takaya ,  Masahiro Sugimoto ,  Yukihiko Watanabe ,  Narumasa Soejima ,  Tsuyoshi Ishikawa

IPC分类号： H01L29/24

CPC分类号： H01L21/0475 ,  H01L29/045 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/66068

摘要： A silicon carbide semiconductor device includes a silicon carbide semiconductor substrate and a trench. The silicon carbide semiconductor substrate has an offset angle with respect to a (0001) plane or a (000-1) plane and has an offset direction in a direction. The trench is provided from a surface of the silicon carbide semiconductor substrate. The trench extends in a direction whose interior angle with respect to the offset direction is 30 degrees or −30 degrees.

摘要翻译： 碳化硅半导体器件包括碳化硅半导体衬底和沟槽。 碳化硅半导体衬底相对于（0001）面或（000-1）面具有偏移角，并且在<11-20>方向上具有偏移方向。 从碳化硅半导体衬底的表面提供沟槽。 沟槽沿相对于偏移方向的内角为30度或-30度的方向延伸。

公开(公告)号：US20120052642A1

公开(公告)日：2012-03-01

申请号：US13220756

申请日：2011-08-30

申请人： Takeshi ENDO ,  Shinichiro MIYAHARA ,  Tomoo MORINO ,  Masaki KONISHI ,  Hirokazu FUJIWARA ,  Jun MORIMOTO ,  Tsuyoshi ISHIKAWA ,  Takashi KATSUNO ,  Yukihiko WATANABE

发明人： Takeshi ENDO ,  Shinichiro MIYAHARA ,  Tomoo MORINO ,  Masaki KONISHI ,  Hirokazu FUJIWARA ,  Jun MORIMOTO ,  Tsuyoshi ISHIKAWA ,  Takashi KATSUNO ,  Yukihiko WATANABE

IPC分类号： H01L21/336

CPC分类号： H01L29/7813 ,  H01L21/30604 ,  H01L21/3065 ,  H01L29/1608 ,  H01L29/4236 ,  H01L29/66068

摘要： A method of manufacturing a semiconductor device includes forming a drift layer on a substrate; forming a base layer on the drift layer; forming a trench to penetrate the base layer and to reach the drift layer; rounding off a part of a shoulder corner and a part of a bottom corner of the trench; covering an inner wall of the trench with an organic film; implanting an impurity to a surface portion of the base layer; forming a source region by activating the implanted impurity; and removing the organic film after the source region is formed, in which the substrate, the drift layer, the base layer and the source region are made of silicon carbide, and the implanting and the activating of the impurity are performed under a condition that the trench is covered with the organic film.

摘要翻译： 制造半导体器件的方法包括在衬底上形成漂移层; 在漂移层上形成基层; 形成沟槽以穿透基层并到达漂移层; 将沟槽的一部分肩部角落和底角的一部分倒圆; 用有机膜覆盖沟槽的内壁; 将杂质注入基层的表面部分; 通过激活注入的杂质形成源区; 在形成源极区域之后除去有机膜，其中基板，漂移层，基极层和源极区域由碳化硅构成，并且杂质的注入和活化在 沟槽被有机膜覆盖。

公开(公告)号：US08096953B2

公开(公告)日：2012-01-17

申请号：US10590128

申请日：2005-12-16

申请人： Takashi Nakamura ,  Kazuya Maegawa ,  Koichi Moriya ,  Shinichiro Miyahara ,  Kaori Takano

发明人： Takashi Nakamura ,  Kazuya Maegawa ,  Koichi Moriya ,  Shinichiro Miyahara ,  Kaori Takano

IPC分类号： A61B5/02

CPC分类号： A61B5/02416 ,  A61B5/0006 ,  A61B5/7207

摘要： An organism information detecting apparatus includes a detector that detects organism information of a subject for a predetermined sampling time period, determines a motion state of the subject when the organism information is detected, and outputs an organism signal. A first calculator processes the organism signal to calculate organism information data, the detector determining a reliability degree of the organism information data based on whether the determined motion state of the subject is a previously determined motion state. A second calculator calculates an average value of the amount of variation per time of data obtained by digitizing the organism signal, the average value being data supplementary to the organism information data. The detector determines the motion state of the subject based on whether the supplementary data exceeds a previously determined threshold. A storage device stores the organism information data and the supplementary data such that the organism information data and the supplementary data are associated with one another.

摘要翻译： 有机体信息检测装置包括：检测对象的生物体信息预定取样时间的检测器，在检测到有机体信息时确定被检体的运动状态，并输出有机体信号。 第一计算器处理生物体信号以计算生物体信息数据，所述检测器基于所确定的对象的运动状态是否是先前确定的运动状态来确定生物信息数据的可靠度。 第二计算器计算通过数字化生物体信号获得的数据的每个时间变化量的平均值，平均值是补充生物体信息数据的数据。 检测器基于补充数据是否超过先前确定的阈值来确定对象的运动状态。 存储装置存储有机体信息数据和补充数据，使得生物体信息数据和补充数据彼此相关联。

公开(公告)号：US07692591B2

公开(公告)日：2010-04-06

申请号：US11628088

申请日：2005-04-27

申请人： Kazuo Kato ,  Koichi Moriya ,  Shinichiro Miyahara

发明人： Kazuo Kato ,  Koichi Moriya ,  Shinichiro Miyahara

IPC分类号： H01Q1/24

CPC分类号： H01Q1/273 ,  H01Q1/243 ,  H01Q1/38

摘要： A portable electronic apparatus has a main body case in which are disposed a display panel, a circuit board, and a dielectric antenna. The dielectric antenna is disposed at a vicinity of a peripheral edge portion of the circuit board.

摘要翻译： 便携式电子设备具有主体壳体，其中设置有显示面板，电路板和电介质天线。 电介质天线设置在电路板的周缘部附近。

公开(公告)号：US20090240520A1

公开(公告)日：2009-09-24

申请号：US10562043

申请日：2004-06-21

申请人： Kaori Takano ,  Ryuji Iijima ,  Kouichi Moirya ,  Shinichiro Miyahara ,  Norihiko Matsuo ,  Shigeru Uematsu ,  Masako Miyazaki ,  Toshio Ohyanagi ,  James Miller ,  Steven Sutphen

发明人： Kaori Takano ,  Ryuji Iijima ,  Kouichi Moirya ,  Shinichiro Miyahara ,  Norihiko Matsuo ,  Shigeru Uematsu ,  Masako Miyazaki ,  Toshio Ohyanagi ,  James Miller ,  Steven Sutphen

IPC分类号： G06Q50/00 ,  G06F15/16 ,  G06Q10/00 ,  A61B5/0205

CPC分类号： G06Q50/22 ,  G06F19/3418 ,  G06F19/3456 ,  G06F19/3481 ,  G06Q10/10 ,  G06Q10/1095 ,  G16H15/00 ,  G16H40/63

摘要： A health care system capable of altering the schedule appropriately depending on the physical condition of a user, a biological information terminal, a schedule managing method, and a schedule managing program. Physical condition information is detected or an action is instructed based on first schedule information, and based on the detection results of physical condition information or the result of an action instruction, information of schedule to be executed is altered from the first information to second schedule information.

摘要翻译： 一种能够根据用户的身体状况，生物信息终端，日程管理方法以及日程表管理程序适当地改变日程的医疗系统。 检测到物理状况信息，或者基于第一调度信息指示动作，并且基于物理条件信息的检测结果或动作指示的结果，将要执行的调度的信息从第一信息改变为第二调度信息 。

公开(公告)号：US09941366B2

公开(公告)日：2018-04-10

申请号：US15105278

申请日：2014-10-14

申请人： Atsushi Onogi ,  Shinichiro Miyahara

发明人： Atsushi Onogi ,  Shinichiro Miyahara

IPC分类号： H01L21/324 ,  H01L29/06 ,  H01L29/66 ,  H01L29/78 ,  H01L29/40 ,  H01L29/12 ,  H01L29/16 ,  H01L21/02

CPC分类号： H01L29/408 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/324 ,  H01L29/06 ,  H01L29/0623 ,  H01L29/12 ,  H01L29/1608 ,  H01L29/66734 ,  H01L29/78 ,  H01L29/7811 ,  H01L29/7813

摘要： Described herein is a semiconductor device comprising: a semiconductor substrate; a trench provided at a surface of the semiconductor substrate; a first insulating layer covering an inner surface of the trench; and a second insulating layer located at a surface of the first insulating layer in the trench. A refraction index of the first insulating layer is larger than a refraction index of the second insulating layer.

公开(公告)号：US08525223B2

公开(公告)日：2013-09-03

申请号：US13450639

申请日：2012-04-19

申请人： Hiroki Watanabe ,  Shinichiro Miyahara ,  Masahiro Sugimoto ,  Hidefumi Takaya ,  Yukihiko Watanabe ,  Narumasa Soejima ,  Tsuyoshi Ishikawa

发明人： Hiroki Watanabe ,  Shinichiro Miyahara ,  Masahiro Sugimoto ,  Hidefumi Takaya ,  Yukihiko Watanabe ,  Narumasa Soejima ,  Tsuyoshi Ishikawa

IPC分类号： H01L21/02

CPC分类号： H01L29/7813 ,  H01L29/045 ,  H01L29/0634 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7397

摘要： A SiC semiconductor device includes: a SiC substrate including a first or second conductive type layer and a first conductive type drift layer and including a principal surface having an offset direction; a trench disposed on the drift layer and having a longitudinal direction; and a gate electrode disposed in the trench via a gate insulation film. A sidewall of the trench provides a channel formation surface. The vertical semiconductor device flows current along with the channel formation surface of the trench according to a gate voltage applied to the gate electrode. The offset direction of the SiC substrate is perpendicular to the longitudinal direction of the trench.

摘要翻译： SiC半导体器件包括：SiC衬底，包括第一或第二导电类型层和第一导电类型漂移层，并且包括具有偏移方向的主表面; 设置在所述漂移层上并具有纵向方向的沟槽; 以及通过栅极绝缘膜设置在沟槽中的栅电极。 沟槽的侧壁提供通道形成表面。 垂直半导体器件根据施加到栅电极的栅极电压与沟道形成表面一起流动电流。 SiC衬底的偏移方向垂直于沟槽的纵向方向。

公开(公告)号：US08470672B2

公开(公告)日：2013-06-25

申请号：US13220756

申请日：2011-08-30

申请人： Takeshi Endo ,  Shinichiro Miyahara ,  Tomoo Morino ,  Masaki Konishi ,  Hirokazu Fujiwara ,  Jun Morimoto ,  Tsuyoshi Ishikawa ,  Takashi Katsuno ,  Yukihiko Watanabe

发明人： Takeshi Endo ,  Shinichiro Miyahara ,  Tomoo Morino ,  Masaki Konishi ,  Hirokazu Fujiwara ,  Jun Morimoto ,  Tsuyoshi Ishikawa ,  Takashi Katsuno ,  Yukihiko Watanabe

IPC分类号： H01L21/336 ,  H01L21/265

CPC分类号： H01L29/7813 ,  H01L21/30604 ,  H01L21/3065 ,  H01L29/1608 ,  H01L29/4236 ,  H01L29/66068

摘要： A method of manufacturing a semiconductor device includes forming a drift layer on a substrate; forming a base layer on the drift layer; forming a trench to penetrate the base layer and to reach the drift layer; rounding off a part of a shoulder corner and a part of a bottom corner of the trench; covering an inner wall of the trench with an organic film; implanting an impurity to a surface portion of the base layer; forming a source region by activating the implanted impurity; and removing the organic film after the source region is formed, in which the substrate, the drift layer, the base layer and the source region are made of silicon carbide, and the implanting and the activating of the impurity are performed under a condition that the trench is covered with the organic film.

摘要翻译： 制造半导体器件的方法包括在衬底上形成漂移层; 在漂移层上形成基层; 形成沟槽以穿透基层并到达漂移层; 将沟槽的一部分肩部角落和底角的一部分倒圆; 用有机膜覆盖沟槽的内壁; 将杂质注入基层的表面部分; 通过激活注入的杂质形成源区; 在形成源极区域之后除去有机膜，其中基板，漂移层，基极层和源极区域由碳化硅构成，并且杂质的注入和活化在 沟槽被有机膜覆盖。

公开(公告)号：US08334541B2

公开(公告)日：2012-12-18

申请号：US13177747

申请日：2011-07-07

申请人： Shinichiro Miyahara ,  Hidefumi Takaya ,  Masahiro Sugimoto ,  Jun Morimoto ,  Yukihiko Watanabe

发明人： Shinichiro Miyahara ,  Hidefumi Takaya ,  Masahiro Sugimoto ,  Jun Morimoto ,  Yukihiko Watanabe

IPC分类号： H01L27/088

CPC分类号： H01L29/7813 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7397 ,  H01L29/7828

摘要： A SiC semiconductor device includes a reverse type MOSFET having: a substrate; a drift layer and a base region on the substrate; a base contact layer and a source region on the base region; multiple trenches having a longitudinal direction in a first direction penetrating the source region and the base region; a gate electrode in each trench via a gate insulation film; an interlayer insulation film covering the gate electrode and having a contact hole, through which the source region and the base contact layer are exposed; a source electrode coupling with the source region and the base region through the contact hole; a drain electrode on the substrate. The source region and the base contact layer extend along with a second direction perpendicular to the first direction, and are alternately arranged along with the first direction. The contact hole has a longitudinal direction in the first direction.

摘要翻译： SiC半导体器件包括：反向型MOSFET，具有：衬底; 衬底上的漂移层和基极区域; 基极接触层和基极区上的源极区; 多个沟槽具有沿着第一方向的纵向方向穿过源极区域和基极区域; 通过栅极绝缘膜在每个沟槽中的栅电极; 覆盖所述栅电极且具有接触孔的层间绝缘膜，所述源极区域和所述基极接触层暴露在所述接触孔中; 源极通过接触孔与源极区域和基极区域耦合; 衬底上的漏电极。 源区域和基底接触层与垂直于第一方向的第二方向一起延伸，并且与第一方向交替布置。 接触孔沿第一方向具有纵向方向。