发明授权
- 专利标题： Semiconductor structure having a wetting layer
- 专利标题（中）： 具有润湿层的半导体结构
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申请号： US13206586申请日： 2011-08-10
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公开(公告)号： US08525232B2公开(公告)日： 2013-09-03
- 发明人: Takeshi Nogami , Keith K. H. Wong , Chih-Chao Yang
- 申请人： Takeshi Nogami , Keith K. H. Wong , Chih-Chao Yang
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理商 Katherine S. Brown
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
A semiconductor structure which includes a semiconductor substrate and a metal gate structure formed in a trench or via on the semiconductor substrate. The metal gate structure includes a gate dielectric; a wetting layer selected from the group consisting of cobalt and nickel on the gate dielectric lining the trench or via and having an oxygen content of no more than about 200 ppm (parts per million) oxygen; and an aluminum layer to fill the remainder of the trench or via. There is also disclosed a method of forming a semiconductor structure in which a wetting layer is formed from cobalt amidinate or nickel amidinate deposited by a chemical vapor deposition process.
公开/授权文献
- US20130037865A1 SEMICONDUCTOR STRUCTURE HAVING A WETTING LAYER 公开/授权日：2013-02-14
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