发明授权
- 专利标题: Nonvolatile programmable logic switch
- 专利标题(中): 非易失性可编程逻辑开关
-
申请号: US13221292申请日: 2011-08-30
-
公开(公告)号: US08525251B2公开(公告)日: 2013-09-03
- 发明人: Daisuke Hagishima , Atsuhiro Kinoshita , Kazuya Matsuzawa , Kazutaka Ikegami , Yoshifumi Nishi
- 申请人: Daisuke Hagishima , Atsuhiro Kinoshita , Kazuya Matsuzawa , Kazutaka Ikegami , Yoshifumi Nishi
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2009-075972 20090326
- 主分类号: H01L29/792
- IPC分类号: H01L29/792
摘要:
A nonvolatile programmable logic switch according to an embodiment includes: a memory cell transistor including: a first source region and a first drain region of a second conductivity type formed at a distance from each other in a first semiconductor region of a first conductivity type; a first insulating film, a charge storage film, a second insulating film, and a control gate stacked in this order and formed on the first semiconductor region between the first source region and the first drain region; a pass transistor including: a second source region and a second drain region of a second conductivity type formed at a distance from each other in a second semiconductor region of the first conductivity type; a third insulating film, a gate electrode stacked in this order and formed on the second semiconductor region between the second source region and the second drain region, the gate electrode being electrically connected to the first drain region; and an electrode for applying a substrate bias to the first and second semiconductor regions.
公开/授权文献
- US20120080739A1 NONVOLATILE PROGRAMMABLE LOGIC SWITCH 公开/授权日:2012-04-05