发明授权
- 专利标题： Array of magnetic tunneling junction film structures with process determined in-plane magnetic anisotropy
- 专利标题（中）： 具有工艺确定的面内磁各向异性的磁隧道结膜结构阵列
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申请号： US13136194申请日： 2011-07-26
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公开(公告)号： US08525280B2公开(公告)日： 2013-09-03
- 发明人: Tai Min , Cheng Horng , Po Kang Wang
- 申请人： Tai Min , Cheng Horng , Po Kang Wang
- 申请人地址： US CA Milpitas
- 专利权人： Headway Technologies, Inc.
- 当前专利权人： Headway Technologies, Inc.
- 当前专利权人地址： US CA Milpitas
- 代理机构： Saile Ackerman LLC
- 代理商 Stephen B. Ackerman
- 主分类号： H01L29/82
- IPC分类号： H01L29/82 ; G11C11/15
摘要：
An MRAM array of MTJ memory cells is provided wherein each such cell is a layered MTJ structure located at an intersection of a word and bit line and has a small circular horizontal cross-section of 1.0 microns or less in diameter and wherein the ferromagnetic free layer of each such cell has a magnetic anisotropy produced by a magnetic coupling with a thin antiferromagnetic layer that is formed on the free layer. The array of MTJ memory cells so provided is far less sensitive to shape irregularities and edge defects of individual cells than arrays of the prior art.
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