发明授权
- 专利标题: Electron emission element including diamond doped with phosphorus
- 专利标题(中): 电子发射元件包括掺杂磷的金刚石
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申请号: US12888650申请日: 2010-09-23
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公开(公告)号: US08525399B2公开(公告)日: 2013-09-03
- 发明人: Mariko Suzuki , Tadashi Sakai , Naoshi Sakuma , Masayuki Katagiri , Yuichi Yamazaki
- 申请人: Mariko Suzuki , Tadashi Sakai , Naoshi Sakuma , Masayuki Katagiri , Yuichi Yamazaki
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Turocy & Watson, LLP
- 优先权: JP2008-086152 20080328
- 主分类号: H01J63/04
- IPC分类号: H01J63/04
摘要:
According to the embodiment, an electron emission element includes a conductive substrate, a first diamond layer of a first conductivity type formed on the conductive substrate, and a second diamond layer of the first conductivity type formed on the first diamond layer. Thereby, it becomes possible to provide the electron emission element having a high electron emission amount and a high current density even in a low electric field at low temperature and the electron emission apparatus using this electron emission element.
公开/授权文献
- US20110050080A1 ELECTRON EMISSION ELEMENT 公开/授权日:2011-03-03
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