Invention Grant
- Patent Title: Double layer interleaved p-n diode modulator
- Patent Title (中): 双层交错p-n二极管调制器
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Application No.: US13535888Application Date: 2012-06-28
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Publication No.: US08526090B1Publication Date: 2013-09-03
- Inventor: William M. Green , Jessie C. Rosenberg , Yurii A. Vlasov
- Applicant: William M. Green , Jessie C. Rosenberg , Yurii A. Vlasov
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: G02B26/00
- IPC: G02B26/00 ; G02F1/03

Abstract:
An optical modulator device includes a body portion operative to propagate an optical mode along a longitudinal axis of the body portion, the body portion comprising a first layer disposed on a second layer, wherein the first layer includes a first p-type doped region adjacent to a first n-type doped region along the longitudinal axis of the body portion, and the second layer includes a second n-type doped region disposed on the first p-type doped region and a second p-type doped region adjacent to the second n-type doped region along the longitudinal axis of the body portion, the second p-type doped region disposed on the first n-type doped region.
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