Invention Grant
- Patent Title: Semiconductor optical integrated element
- Patent Title (中): 半导体光学集成元件
-
Application No.: US13020028Application Date: 2011-02-03
-
Publication No.: US08526478B2Publication Date: 2013-09-03
- Inventor: Eitaro Ishimura , Kazuhisa Takagi , Keisuke Matsumoto , Takeshi Saito
- Applicant: Eitaro Ishimura , Kazuhisa Takagi , Keisuke Matsumoto , Takeshi Saito
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Leydig, Voit & Mayer, Ltd.
- Priority: JP2010-133023 20100610
- Main IPC: H01S5/00
- IPC: H01S5/00

Abstract:
A semiconductor optical integrated element includes: a substrate; and a laser diode and a modulator which are integrated on the substrate. The laser diode includes an embedded waveguide having a core layer, both sides of which are embedded in a semiconductor material. The modulator includes a high-mesa ridge waveguide having a core layer, neither side of which is embedded in the semiconductor material. The core layers in the laser diode and the modulator are stripe-shaped.
Public/Granted literature
- US20110305255A1 SEMICONDUCTOR OPTICAL INTEGRATED ELEMENT AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2011-12-15
Information query