发明授权
US08527819B2 Data storage in analog memory cell arrays having erase failures
有权
具有擦除故障的模拟存储单元阵列中的数据存储
- 专利标题： Data storage in analog memory cell arrays having erase failures
- 专利标题（中）： 具有擦除故障的模拟存储单元阵列中的数据存储
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申请号： US12677114申请日： 2008-10-12
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公开(公告)号： US08527819B2公开(公告)日： 2013-09-03
- 发明人: Ofir Shalvi , Shai Winter , Naftali Sommer , Dotan Sokolov
- 申请人： Ofir Shalvi , Shai Winter , Naftali Sommer , Dotan Sokolov
- 申请人地址： US CA Cupertino
- 专利权人： Apple Inc.
- 当前专利权人： Apple Inc.
- 当前专利权人地址： US CA Cupertino
- 代理机构： Meyertons, Hood, Kivlin, Kowert & Goetzel, P.C.
- 国际申请： PCT/IL2008/001356 WO 20081012
- 国际公布： WO2009/050703 WO 20090423
- 主分类号： G11C29/00
- IPC分类号： G11C29/00
摘要：
A method for data storage includes performing an erasure operation on a group of analog memory cells (32). One or more of the memory cells in the group, which failed the erasure operation, are identified as erase-failed cells. A storage configuration that is used for programming the analog memory cells in the group is modified responsively to the identified erase-failed cells. Data is stored in the group of the analog memory cells using the modified storage configuration.
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