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    Data Storage In Analog Memory Cell Arrays Having Erase Failures
    5.
    发明申请
    Data Storage In Analog Memory Cell Arrays Having Erase Failures 有权
    数据存储在具有擦除故障的模拟存储器单元阵列中

    公开(公告)号：US20100199150A1

    公开(公告)日：2010-08-05

    申请号：US12677114

    申请日：2008-10-12

    申请人： Ofir Shalvi ,  Shai Winter ,  Naftali Sommer ,  Dotan Sokolov

    发明人： Ofir Shalvi ,  Shai Winter ,  Naftali Sommer ,  Dotan Sokolov

    IPC分类号： G11C29/00 ,  G06F12/00 ,  G06F11/16 ,  G11C11/34

    CPC分类号： G11C16/344 ,  G11C16/04 ,  G11C16/345 ,  G11C29/52

    摘要： A method for data storage includes performing an erasure operation on a group of analog memory cells (32). One or more of the memory cells in the group, which failed the erasure operation, are identified as erase-failed cells. A storage configuration that is used for programming the analog memory cells in the group is modified responsively to the identified erase-failed cells. Data is stored in the group of the analog memory cells using the modified storage configuration.

    摘要翻译： 一种用于数据存储的方法包括对一组模拟存储器单元（32）执行擦除操作。 组中的一个或多个存储器单元，其在擦除操作中失败，被识别为擦除故障单元。 用于对组中的模拟存储器单元进行编程的存储配置响应于所识别的擦除故障单元被修改。 使用修改的存储配置将数据存储在模拟存储器单元的组中。

    Data storage in analog memory cell arrays having erase failures
    7.
    发明授权
    Data storage in analog memory cell arrays having erase failures 有权
    具有擦除故障的模拟存储单元阵列中的数据存储

    公开(公告)号：US08527819B2

    公开(公告)日：2013-09-03

    申请号：US12677114

    申请日：2008-10-12

    申请人： Ofir Shalvi ,  Shai Winter ,  Naftali Sommer ,  Dotan Sokolov

    发明人： Ofir Shalvi ,  Shai Winter ,  Naftali Sommer ,  Dotan Sokolov

    IPC分类号： G11C29/00

    CPC分类号： G11C16/344 ,  G11C16/04 ,  G11C16/345 ,  G11C29/52

    摘要： A method for data storage includes performing an erasure operation on a group of analog memory cells (32). One or more of the memory cells in the group, which failed the erasure operation, are identified as erase-failed cells. A storage configuration that is used for programming the analog memory cells in the group is modified responsively to the identified erase-failed cells. Data is stored in the group of the analog memory cells using the modified storage configuration.

    摘要翻译： 一种用于数据存储的方法包括对一组模拟存储器单元（32）执行擦除操作。 组中的一个或多个存储器单元，其在擦除操作中失败，被识别为擦除故障单元。 用于对组中的模拟存储器单元进行编程的存储配置响应于所识别的擦除故障单元被修改。 使用修改的存储配置将数据存储在模拟存储器单元的组中。

    Programming of analog memory cells using a single programming pulse per state transition
    9.
    发明授权
    Programming of analog memory cells using a single programming pulse per state transition 有权
    使用每个状态转换的单个编程脉冲对模拟存储器单元进行编程

    公开(公告)号：US07924587B2

    公开(公告)日：2011-04-12

    申请号：US12388528

    申请日：2009-02-19

    申请人： Uri Perlmutter ,  Shai Winter ,  Ofir Shalvi ,  Eyal Gurgi ,  Naftali Sommer ,  Oren Golov

    发明人： Uri Perlmutter ,  Shai Winter ,  Ofir Shalvi ,  Eyal Gurgi ,  Naftali Sommer ,  Oren Golov

    IPC分类号： G11C27/00

    CPC分类号： G11C11/5628 ,  G11C27/005 ,  G11C29/00

    摘要： A method for data storage in analog memory cells includes defining multiple programming states for storing data in the analog memory cells. The programming states represent respective combinations of more than one bit and correspond to respective, different levels of a physical quantity stored in the memory cells. The data is stored in the memory cells by applying to the memory cells programming pulses that cause the levels of the physical quantity stored in the memory cells to transition between the programming states, such that a given transition is caused by only a single programming pulse.

    摘要翻译： 一种用于在模拟存储单元中进行数据存储的方法包括定义用于在模拟存储器单元中存储数据的多个编程状态。 编程状态表示多于一个位的相应组合，并且对应于存储在存储器单元中的物理量的相应不同级别。 通过向存储器单元施加编程脉冲将数据存储在存储器单元中，编程脉冲使存储单元中存储的物理量的电平在编程状态之间转变，使得给定的转换仅由单个编程脉冲引起。

    Data storage in analog memory cells with protection against programming interruption
    10.
    发明授权
    Data storage in analog memory cells with protection against programming interruption 有权
    数据存储在模拟存储单元中，防止编程中断

    公开(公告)号：US07924613B1

    公开(公告)日：2011-04-12

    申请号：US12497707

    申请日：2009-07-06

    申请人： Naftali Sommer ,  Shai Winter ,  Ofir Shalvi

    发明人： Naftali Sommer ,  Shai Winter ,  Ofir Shalvi

    IPC分类号： G11C11/34

    CPC分类号： G11C11/5628 ,  G11C11/5642 ,  G11C2211/5621

    摘要： A method for data storage includes storing first data in analog memory cells using a first programming operation, which writes to the memory cells respective analog values representing respective bit values of the first data. Second data is stored in the analog memory cells in addition to the first data using a second programming operation, which modifies the respective analog values of the memory cells so as to represent bit value combinations of the first and second data. The first and second programming operations are defined such that, at all times during the second programming operation, the analog value of each memory cell remains unambiguously indicative of the respective bit value of the first data stored in that memory cell.

    摘要翻译： 一种用于数据存储的方法包括：使用第一编程操作将第一数据存储在模拟存储器单元中，该第一编程操作向存储器单元写入表示第一数据的相应位值的相应模拟值。 第二数据除了使用第二编程操作的第一数据之外存储在模拟存储器单元中，第二编程操作修改存储器单元的相应模拟值，以便表示第一和第二数据的位值组合。 第一和第二编程操作被定义为使得在第二编程操作期间的任何时刻，每个存储器单元的模拟值保持明确地指示存储在该存储器单元中的第一数据的相应位值。