Invention Grant
- Patent Title: Method for backside polymer reduction in dry-etch process
- Patent Title (中): 干蚀刻工艺中背面聚合物还原的方法
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Application No.: US12798201Application Date: 2010-03-30
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Publication No.: US08529783B2Publication Date: 2013-09-10
- Inventor: Huang-Ming Chen , Chun-Li Chou , Chao-Cheng Chen , Hun-Jan Tao
- Applicant: Huang-Ming Chen , Chun-Li Chou , Chao-Cheng Chen , Hun-Jan Tao
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
A method for preventing the formation of contaminating polymeric films on the backsides of semiconductor substrates includes providing an oxygen-impregnated focus ring and/or an oxygen-impregnated chuck that releases oxygen during etching operations. The method further provides delivering oxygen gas to the substrate by mixing oxygen in the cooling gas mixture, maintaining the focus ring at a temperature no greater than the substrate temperature during etching and cleaning the substrate using a two step plasma cleaning sequence that includes suspending the substrate above the chuck.
Public/Granted literature
- US20100190349A1 Method for backside polymer reduction in dry-etch process Public/Granted day:2010-07-29
Information query
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