发明授权
US08530255B2 Method of manufacturing semiconductor laser, semiconductor laser, optical pickup, optical disk device, method of manufacturing semiconductor device, semiconductor device, and method of growing nitride type group III-V compound semiconductor layer
有权
制造半导体激光器的方法，半导体激光器，光学拾取器，光盘装置，制造半导体器件的方法，半导体器件以及生长氮化物型III-V族化合物半导体层的方法
- 专利标题： Method of manufacturing semiconductor laser, semiconductor laser, optical pickup, optical disk device, method of manufacturing semiconductor device, semiconductor device, and method of growing nitride type group III-V compound semiconductor layer
- 专利标题（中）： 制造半导体激光器的方法，半导体激光器，光学拾取器，光盘装置，制造半导体器件的方法，半导体器件以及生长氮化物型III-V族化合物半导体层的方法
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申请号： US12180915申请日： 2008-07-28
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公开(公告)号： US08530255B2公开(公告)日： 2013-09-10
- 发明人: Masaru Kuramoto , Eiji Nakayama , Yoshitsugu Ohizumi , Tsuyoshi Fujimoto
- 申请人： Masaru Kuramoto , Eiji Nakayama , Yoshitsugu Ohizumi , Tsuyoshi Fujimoto
- 申请人地址： JP Tokyo
- 专利权人： Sony Corporation
- 当前专利权人： Sony Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Dentons US LLP
- 优先权： JP2007-050461 20070228; JP2007-282714 20071031
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A method of manufacturing a semiconductor laser having an end face window structure, by growing over a substrate a nitride type Group III-V compound semiconductor layer including an active layer including a nitride type Group III-V compound semiconductor containing at least In and Ga. The method includes the steps of forming a mask including an insulating film over the substrate, at least in the vicinity of the position of forming the end face window structure; and growing the nitride type Group III-V compound semiconductor layer including the active layer over a part, not covered with the mask, of the substrate.
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