Invention Grant
- Patent Title: Superstrate solar cell
- Patent Title (中): 太阳能电池
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Application No.: US13207058Application Date: 2011-08-10
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Publication No.: US08530263B2Publication Date: 2013-09-10
- Inventor: Wen-Chin Lee , Wen-Tsai Yen , Liang-Sheng Yu , Yung Sheng Chiu
- Applicant: Wen-Chin Lee , Wen-Tsai Yen , Liang-Sheng Yu , Yung Sheng Chiu
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L31/00

Abstract:
A method of fabricating a solar cell includes forming a front contact layer over a substrate, and the front contact layer is optically transparent at specified wavelengths and electrically conductive. A first scribed area is scribed through the front contact layer to expose a portion of the substrate. A buffer layer doped with an n-type dopant is formed over the front contact layer and the first scribed area. An absorber layer doped with a p-type dopant is formed over the buffer layer. A back contact layer that is electrically conductive is formed over the absorber layer.
Public/Granted literature
- US20130037093A1 SUPERSTRATE SOLAR CELL Public/Granted day:2013-02-14
Information query
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