Invention Grant
US08530329B2 Methods of fabricating semiconductor devices having various isolation regions
有权
制造具有各种隔离区域的半导体器件的方法
- Patent Title: Methods of fabricating semiconductor devices having various isolation regions
- Patent Title (中): 制造具有各种隔离区域的半导体器件的方法
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Application No.: US13162050Application Date: 2011-06-16
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Publication No.: US08530329B2Publication Date: 2013-09-10
- Inventor: Yong-Soon Choi , Jun-Won Lee , Gil-Heyun Choi , Eun-Kee Hong , Hong-Gun Kim , Ha-Young Yi
- Applicant: Yong-Soon Choi , Jun-Won Lee , Gil-Heyun Choi , Eun-Kee Hong , Hong-Gun Kim , Ha-Young Yi
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2010-0075693 20100805
- Main IPC: H01L21/78
- IPC: H01L21/78
Abstract:
A method of fabricating a semiconductor device includes forming a first trench and a second trench in a semiconductor substrate, forming a first insulator to completely fill the first trench, the first insulator covering a bottom surface and lower sidewalls of the second trench and exposing upper sidewalls of the second trench, and forming a second insulator on the first insulator in the second trench.
Public/Granted literature
- US20120034757A1 METHODS OF FABRICATING SEMICONDUCTOR DEVICES HAVING VARIOUS ISOLATION REGIONS Public/Granted day:2012-02-09
Information query
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