Invention Grant
- Patent Title: Method of integrating epitaxial film onto assembly substrate
- Patent Title (中): 将外延膜整合到组装衬底上的方法
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Application No.: US13487561Application Date: 2012-06-04
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Publication No.: US08530342B2Publication Date: 2013-09-10
- Inventor: Eric Ting-Shan Pan
- Applicant: Eric Ting-Shan Pan
- Applicant Address: US NV Zephyr Cove
- Assignee: Athenaeum, LLC
- Current Assignee: Athenaeum, LLC
- Current Assignee Address: US NV Zephyr Cove
- Agent J. Nichols Gross
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A method of growing an epitaxial film and transferring it to an assembly substrate is disclosed. The film growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications.
Public/Granted literature
- US20120238078A1 Method of Integrating Epitaxial Film Onto Assembly Substrate Public/Granted day:2012-09-20
Information query
IPC分类:
