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公开(公告)号：US08530342B2
公开(公告)日：2013-09-10
申请号：US13487561
申请日：2012-06-04
Applicant: Eric Ting-Shan Pan
Inventor： Eric Ting-Shan Pan
IPC: H01L21/00
CPC classification number: C30B35/00 , C30B11/002 , C30B11/14 , C30B19/06 , C30B19/12 , H01L21/02625 , H01L31/0725 , H01L31/0735 , H01L31/1844 , Y02E10/544 , Y02P70/521
Abstract: A method of growing an epitaxial film and transferring it to an assembly substrate is disclosed. The film growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications.
Abstract translation: 公开了一种生长外延膜并将其转移到组件衬底的方法。 膜生长和转移使用外延侧向过度生长技术进行。 可以进一步处理组装衬底上形成的外延膜以形成诸如太阳能电池，发光二极管和其它器件的器件，并组装成所需应用的更高集成度。
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公开(公告)号：US20130200429A1
公开(公告)日：2013-08-08
申请号：US13724155
申请日：2012-12-21
Applicant: Eric Ting-Shan Pan
Inventor： Eric Ting-Shan Pan
IPC: H01L21/78 , H01L23/498 , H01L21/768
CPC classification number: H01L21/78 , C30B19/12 , C30B23/02 , C30B25/18 , H01L21/2007 , H01L21/76805 , H01L23/49827 , H01L23/49833 , H01L24/32 , H01L24/83 , H01L2224/29187 , H01L2224/2919 , H01L2224/32225 , H01L2224/8385 , H01L2224/83896 , H01L2924/12042 , H01L2924/1461 , H01L2924/053 , H01L2924/00014 , H01L2924/00
Abstract: A method of growth and transfer of epitaxial structures from semiconductor crystalline substrate(s) to an assembly substrate. Using this method, the assembly substrate encloses one or more semiconductor materials and defines a wafer size that is equal to or larger than the semiconductor crystalline substrate for further wafer processing. The process also provides a unique platform for heterogeneous integration of diverse material systems and device technologies onto one single substrate.
Abstract translation: 外延结构从半导体晶体衬底生长和转移到组件衬底的方法。 使用该方法，组装衬底包围一个或多个半导体材料并且限定等于或大于半导体晶体衬底的晶片尺寸以用于进一步的晶片处理。 该过程还提供了一个独特的平台，用于将不同材料系统和设备技术的异构集成到单个基板上。
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公开(公告)号：US20120238080A1
公开(公告)日：2012-09-20
申请号：US13487592
申请日：2012-06-04
Applicant: Eric Ting-Shan Pan
Inventor： Eric Ting-Shan Pan
IPC: H01L21/20
CPC classification number: C30B35/00 , C30B11/002 , C30B11/14 , C30B19/06 , C30B19/12 , H01L21/02625 , H01L31/0725 , H01L31/0735 , H01L31/1844 , Y02E10/544 , Y02P70/521
Abstract: A method of growing an epitaxial film and transferring it to an assembly substrate is disclosed. The film growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications.
Abstract translation: 公开了一种生长外延膜并将其转移到组件衬底的方法。 膜生长和转移使用外延侧向过度生长技术进行。 可以进一步处理组装衬底上形成的外延膜以形成诸如太阳能电池，发光二极管和其它器件的器件，并组装成所需应用的更高集成度。
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公开(公告)号：US08193078B2
公开(公告)日：2012-06-05
申请号：US12607762
申请日：2009-10-28
Applicant: Eric Ting-Shan Pan
Inventor： Eric Ting-Shan Pan
IPC: H01L21/00
CPC classification number: C30B35/00 , C30B11/002 , C30B11/14 , C30B19/06 , C30B19/12 , H01L21/02625 , H01L31/0725 , H01L31/0735 , H01L31/1844 , Y02E10/544 , Y02P70/521
Abstract: A method of growing an epitaxial film and transferring it to an assembly substrate is disclosed. The film growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications.
Abstract translation: 公开了一种生长外延膜并将其转移到组件衬底的方法。 膜生长和转移使用外延侧向过度生长技术进行。 可以进一步处理组装衬底上形成的外延膜以形成诸如太阳能电池，发光二极管和其它器件的器件，并组装成所需应用的更高集成度。
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公开(公告)号：US20110247550A1
公开(公告)日：2011-10-13
申请号：US13047360
申请日：2011-03-14
Applicant: Eric Ting-Shan Pan
Inventor： Eric Ting-Shan Pan
CPC classification number: C30B11/002 , C30B11/14 , C30B19/06 , C30B19/12 , C30B35/00 , H01L21/02625 , Y10T117/1024
Abstract: An apparatus for growing an epitaxial film and transferring it to an assembly substrate is disclosed. The film growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications.
Abstract translation: 公开了一种用于生长外延膜并将其转移到组件衬底的装置。 膜生长和转移使用外延侧向过度生长技术进行。 可以进一步处理组装衬底上形成的外延膜以形成诸如太阳能电池，发光二极管和其它器件的器件，并组装成所需应用的更高集成度。
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Patent Agency Ranking
公开(公告)号：US08507371B2
公开(公告)日：2013-08-13
申请号：US13487610
申请日：2012-06-04
Applicant: Eric Ting-Shan Pan
Inventor： Eric Ting-Shan Pan
IPC: H01L21/00
CPC classification number: C30B35/00 , C30B11/002 , C30B11/14 , C30B19/06 , C30B19/12 , H01L21/02625 , H01L31/0725 , H01L31/0735 , H01L31/1844 , Y02E10/544 , Y02P70/521
Abstract: A method of growing an epitaxial semiconductor structure is disclosed. The growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications.
Abstract translation: 公开了一种生长外延半导体结构的方法。 生长和转移使用外延侧向过度生长技术进行。 可以进一步处理组装衬底上形成的外延膜以形成诸如太阳能电池，发光二极管和其它器件的器件，并组装成所需应用的更高集成度。
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公开(公告)号：US08430056B2
公开(公告)日：2013-04-30
申请号：US13047360
申请日：2011-03-14
Applicant: Eric Ting-Shan Pan
Inventor： Eric Ting-Shan Pan
CPC classification number: C30B11/002 , C30B11/14 , C30B19/06 , C30B19/12 , C30B35/00 , H01L21/02625 , Y10T117/1024
Abstract: An apparatus for growing an epitaxial film and transferring it to an assembly substrate is disclosed. The film growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications.
Abstract translation: 公开了一种用于生长外延膜并将其转移到组件衬底的装置。 膜生长和转移使用外延侧向过度生长技术进行。 可以进一步处理组装衬底上形成的外延膜以形成诸如太阳能电池，发光二极管和其它器件的器件，并组装成所需应用的更高集成度。
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公开(公告)号：US20120238084A1
公开(公告)日：2012-09-20
申请号：US13487772
申请日：2012-06-04
Applicant: Eric Ting-Shan Pan
Inventor： Eric Ting-Shan Pan
IPC: H01L21/20
CPC classification number: C30B35/00 , C30B11/002 , C30B11/14 , C30B19/06 , C30B19/12 , H01L21/02625 , H01L31/0725 , H01L31/0735 , H01L31/1844 , Y02E10/544 , Y02P70/521
Abstract: A method of growing an epitaxial semiconductor structure is disclosed. The growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications.
Abstract translation: 公开了一种生长外延半导体结构的方法。 生长和转移使用外延侧向过度生长技术进行。 可以进一步处理组装衬底上形成的外延膜以形成诸如太阳能电池，发光二极管和其它器件的器件，并组装成所需应用的更高集成度。
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公开(公告)号：US20120238083A1
公开(公告)日：2012-09-20
申请号：US13487610
申请日：2012-06-04
Applicant: Eric Ting-Shan Pan
Inventor： Eric Ting-Shan Pan
IPC: H01L21/20
CPC classification number: C30B35/00 , C30B11/002 , C30B11/14 , C30B19/06 , C30B19/12 , H01L21/02625 , H01L31/0725 , H01L31/0735 , H01L31/1844 , Y02E10/544 , Y02P70/521
Abstract: A method of growing an epitaxial semiconductor structure is disclosed. The growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications.
Abstract translation: 公开了一种生长外延半导体结构的方法。 生长和转移使用外延侧向过度生长技术进行。 可以进一步处理组装衬底上形成的外延膜以形成诸如太阳能电池，发光二极管和其它器件的器件，并组装成所需应用的更高集成度。
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公开(公告)号：US20120238079A1
公开(公告)日：2012-09-20
申请号：US13487574
申请日：2012-06-04
Applicant: Eric Ting-Shan Pan
Inventor： Eric Ting-Shan Pan
IPC: H01L21/20
CPC classification number: C30B35/00 , C30B11/002 , C30B11/14 , C30B19/06 , C30B19/12 , H01L21/02625 , H01L31/0725 , H01L31/0735 , H01L31/1844 , Y02E10/544 , Y02P70/521
Abstract: A method of growing an epitaxial film and transferring it to an assembly substrate is disclosed. The film growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications.
Abstract translation: 公开了一种生长外延膜并将其转移到组件衬底的方法。 膜生长和转移使用外延侧向过度生长技术进行。 可以进一步处理组装衬底上形成的外延膜以形成诸如太阳能电池，发光二极管和其它器件的器件，并组装成所需应用的更高集成度。
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