- Patent Title: Gas field ion source, charged particle microscope, and apparatus
-
Application No.: US13355104Application Date: 2012-01-20
-
Publication No.: US08530865B2Publication Date: 2013-09-10
- Inventor: Hiroyasu Shichi , Shinichi Matsubara , Takashi Ohshima , Satoshi Tomimatsu , Tomihiro Hashizume , Tohru Ishitani
- Applicant: Hiroyasu Shichi , Shinichi Matsubara , Takashi Ohshima , Satoshi Tomimatsu , Tomihiro Hashizume , Tohru Ishitani
- Applicant Address: JP Tokyo
- Assignee: Hitachi High-Technologies Corporation
- Current Assignee: Hitachi High-Technologies Corporation
- Current Assignee Address: JP Tokyo
- Agency: Stites & Harbison, PLLC
- Agent Juan Carlos A. Marques, Esq.; Nicholas B. Trenkle, Esq.
- Priority: JP2008/000477 20080107
- Main IPC: H01J49/26
- IPC: H01J49/26 ; H01J49/00 ; H01J37/08

Abstract:
A gas field ion source that can simultaneously increase a conductance during rough vacuuming and reduce an extraction electrode aperture diameter from the viewpoint of the increase of ion current. The gas field ion source has a mechanism to change a conductance in vacuuming a gas molecule ionization chamber. That is, the conductance in vacuuming a gas molecule ionization chamber is changed in accordance with whether or not an ion beam is extracted from the gas molecule ionization chamber. By forming lids as parts of the members constituting the mechanism to change the conductance with a bimetal alloy, the conductance can be changed in accordance with the temperature of the gas molecule ionization chamber, for example the conductance is changed to a relatively small conductance at a relatively low temperature and to a relatively large conductance at a relatively high temperature.
Public/Granted literature
- US20120119086A1 GAS FIELD ION SOURCE, CHARGED PARTICLE MICROSCOPE, AND APPARATUS Public/Granted day:2012-05-17
Information query