发明授权
- 专利标题: Solid-state image sensor
- 专利标题(中): 固态图像传感器
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申请号: US13382878申请日: 2010-06-23
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公开(公告)号: US08530947B2公开(公告)日: 2013-09-10
- 发明人: Yasushi Kondo , Hideki Tominaga , Kenji Takubo , Ryuta Hirose , Shigetoshi Sugawa , Hideki Mutoh
- 申请人: Yasushi Kondo , Hideki Tominaga , Kenji Takubo , Ryuta Hirose , Shigetoshi Sugawa , Hideki Mutoh
- 申请人地址: JP Kyoto JP Miyagi
- 专利权人: Shimadzu Corporation,Tohoku University
- 当前专利权人: Shimadzu Corporation,Tohoku University
- 当前专利权人地址: JP Kyoto JP Miyagi
- 代理机构: Bingham McCutchen LLP
- 优先权: JP2009-163397 20090710
- 国际申请: PCT/JP2010/060661 WO 20100623
- 国际公布: WO2011/004708 WO 20110113
- 主分类号: H01L27/148
- IPC分类号: H01L27/148
摘要:
A floating diffusion region is formed at an edge of a light-receiving surface of an embedded photodiode, with a transfer gate electrode located therebetween. A first region, with radially extending portions centered on the FD region, and a second region, located to the outside of the first region, are created in the substantially sector-shaped light-receiving surface. A dopant whose conductivity type is the same as the signal charges to be collected in the first region are introduced, whereby an electric field for moving the signal charges from the radially extending sections towards the center is created due to a three-dimensional field effect. As a result, the charge-transfer time is reduced. Additionally, since a circuit element in the subsequent stage can be placed adjacent to the floating diffusion region, the parasitic capacitance of the floating diffusion region can be reduced and a highly sensitive element can be obtained.
公开/授权文献
- US20120112255A1 Solid-State Image Sensor 公开/授权日:2012-05-10
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