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发明授权
US08530978B1 High current high voltage GaN field effect transistors and method of fabricating same 有权
大电流高压GaN场效应晶体管及其制造方法

High current high voltage GaN field effect transistors and method of fabricating same
摘要：
A field effect transistor (FET) having a source contact to a channel layer, a drain contact to the channel layer, and a gate contact on a barrier layer over the channel layer, the FET including a dielectric layer on the barrier layer between the source contact and the drain contact and over the gate contact, and a field plate on the dielectric layer, the field plate connected to the source contact and extending over a space between the gate contact and the drain contact and the field plate comprising a sloped sidewall in the space between the gate contact and the drain contact.
摘要（中）：

具有到沟道层的源极接触的场效应晶体管（FET），沟道层的漏极接触以及沟道层上的阻挡层上的栅极接触，所述FET包括在源极之间的阻挡层上的介电层 接触和漏极接触以及栅极接触，以及介电层上的场板，场板连接到源极接触并在栅极接触和漏极接触之间的空间上延伸，场板包括倾斜的侧壁 栅极接触和漏极接触之间的空间。

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